The RRH100P03GZETB is a high-performance MOSFET (Metal Oxide) from ROHM Semiconductor, designed for applications requiring robust power management and efficient switching. This P-Channel 30V, 10A MOSFET is packaged in an 8SOP and is designed for surface mount applications. With a maximum gate-source voltage of ±20V, it offers flexibility in various electronic systems. The RRH100P03GZETB is not recommended for new designs, but it remains a reliable choice for existing applications.
RRH100P03GZETB Features
High Input Capacitance: The RRH100P03GZETB boasts a maximum input capacitance (Ciss) of 3600 pF at 10V, ensuring fast charging and discharging of the gate.
Low Gate Charge: With a maximum gate charge (Qg) of 68 nC at 10V, this MOSFET reduces switching losses and improves efficiency.
Robust Voltage Ratings: It can handle a drain-to-source voltage (Vdss) of up to 30V and a maximum power dissipation of 650mW at ambient temperature.
Low On-Resistance: The RRH100P03GZETB has a maximum Rds(on) of 12.6mOhm at 10A and 10V, contributing to low power loss during operation.
Wide Operating Temperature: It operates within a wide temperature range, with a junction temperature (TJ) of up to 150°C, making it suitable for high-temperature environments.
Compliance and Regulations: This MOSFET is compliant with ROHS3 and REACH regulations, ensuring environmental and health safety.
RRH100P03GZETB Applications
The RRH100P03GZETB is ideal for various applications where high power handling and efficient switching are crucial:
Power Management: In power supply circuits, the RRH100P03GZETB can efficiently manage and switch high currents with low resistance.
Automotive Electronics: Due to its high temperature rating, it is suitable for automotive applications where components are exposed to extreme temperatures.
Industrial Control Systems: Its robust design makes it a good fit for industrial control systems that require reliable switching under various conditions.
Conclusion of RRH100P03GZETB
While the RRH100P03GZETB is not recommended for new designs, it remains a solid choice for existing applications that require a MOSFET with high power handling, low on-resistance, and compliance with environmental regulations. Its unique combination of features makes it suitable for power management, automotive electronics, and industrial control systems. For those looking to upgrade or maintain existing systems, the RRH100P03GZETB continues to offer reliable performance.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
RRH100P03GZETB Documents
Download datasheets and manufacturer documentation for RRH100P03GZETB
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service