ROHM Semiconductor_RRH140P03GZETB
original

ROHM Semiconductor
RRH140P03GZETB

278-RRH140P03GZETB
PDF Datasheet
MOSFET P-CH 30V 14A 8SOP

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
8000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Product Status
Not For New Designs
Supplier Device Package
8-SOP
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
650mW (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Show More

RRH140P03GZETB Description

RRH140P03GZETB Description

The RRH140P03GZETB is a high-performance MOSFET (Metal Oxide) developed by ROHM Semiconductor. This P-Channel device offers a combination of advanced features and superior performance, making it ideal for various applications in the electronics industry.

RRH140P03GZETB Features

  • Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Product Status: Not For New Designs
  • Drain to Source Voltage (Vdss): 30 V
  • Power Dissipation (Max): 650mW (Ta)
  • Technology: MOSFET (Metal Oxide)
  • REACH Status: REACH Unaffected
  • Vgs (Max): ±20V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • HTSUS: 8541.21.0095
  • Package: Tape & Reel (TR)
  • Base Product Number: RRH140

RRH140P03GZETB Applications

The RRH140P03GZETB is an ideal choice for applications that require high power dissipation, low on-resistance, and high drain current. Some specific use cases include:

  1. Power Management: Due to its high power dissipation capability, the RRH140P03GZETB is suitable for power management applications in various electronic devices.
  2. Motor Control: The device's high drain current and low on-resistance make it an excellent choice for motor control applications, ensuring efficient operation and reduced power loss.
  3. Industrial Automation: In industrial automation systems, the RRH140P03GZETB can be used for controlling high-power loads, providing reliable performance in demanding environments.

Conclusion of RRH140P03GZETB

The RRH140P03GZETB is a high-performance MOSFET from ROHM Semiconductor, offering a range of advanced features and superior performance. Its unique combination of high power dissipation, low on-resistance, and high drain current makes it an ideal choice for various applications in the electronics industry, including power management, motor control, and industrial automation. While it is marked as "Not For New Designs," it remains a reliable option for existing designs that require its specific performance characteristics.

FAQ

What voltage specification is listed for RRH140P03GZETB?
The listed voltage-related specification for RRH140P03GZETB is 30 V.
What is RRH140P03GZETB?
Is RRH140P03GZETB currently in stock?
What package or case is RRH140P03GZETB available in?
Are there related or alternative parts for RRH140P03GZETB?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ