The RRR040P03TL is a high-performance MOSFET P-CH 30V 4A TSMT3 offered by ROHM Semiconductor, a renowned manufacturer in the electronics industry. This single FET is designed to deliver exceptional performance in various applications. With a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4A at 25°C, the RRR040P03TL is well-suited for high-power applications. Its low Rds On of 45mOhm @ 4A, 10V ensures efficient power dissipation, with a maximum power dissipation of 1W (Ta). The device is mounted on a surface mount package, making it ideal for compact designs.
RRR040P03TL Features
Technology: MOSFET (Metal Oxide) - Offers high efficiency and low power consumption.
REACH Status: REACH Unaffected - Compliant with the European Union's regulations on chemicals.
RRR040P03TL Applications
The RRR040P03TL is ideal for a variety of applications where high power and efficiency are required. Some specific use cases include:
Power Management: In power supply circuits, the RRR040P03TL's high Vdss and low Rds On make it suitable for managing power distribution efficiently.
Motor Control: Its ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as in industrial automation and robotics.
Automotive Electronics: The RRR040P03TL's high-temperature operation and robustness make it suitable for automotive applications, such as engine control units and power windows.
Conclusion of RRR040P03TL
The RRR040P03TL from ROHM Semiconductor is a powerful MOSFET P-CH 30V 4A TSMT3 that offers a combination of high performance, efficiency, and reliability. Its unique features, such as low Rds On, high Vdss, and wide Vgs range, make it an excellent choice for high-power applications in power management, motor control, and automotive electronics. Despite being marked as "Not For New Designs," the RRR040P03TL remains a valuable option for existing designs that require its specific performance characteristics.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
RRR040P03TL Documents
Download datasheets and manufacturer documentation for RRR040P03TL
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Shipping Rate
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