ROHM Semiconductor_RS1E320GNTB
original

ROHM Semiconductor
RS1E320GNTB

278-RS1E320GNTB
PDF Datasheet
MOSFET N-CH 30V 32A 8HSOP
16 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
74.6
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
2850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
42.8 nC @ 10 V
Typical Rise Time (ns)
15.6
PPAP
No
Channel Mode
Enhancement
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RS1E320GNTB Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the RS1E320GNTB belongs to can be classified under the Discrete Semiconductors. RS1E320GNTB is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. RS1E320GNTB provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. ROHM Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. ROHM Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, ROHM Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

What package or case is RS1E320GNTB available in?
RS1E320GNTB is available in the 8-PowerTDFN package / case.
What operating temperature range does RS1E320GNTB support?
Are there related or alternative parts for RS1E320GNTB?
What is the standard lead time for RS1E320GNTB?
What voltage specification is listed for RS1E320GNTB?
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