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ROHM Semiconductor
RS1L120GNTB
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Tech Specifications
RS1L120GNTB Description
RS1L120GNTB is a low-side power MOSFET from ROHM Semiconductor. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and battery management systems.
Description:
The RS1L120GNTB is an N-channel MOSFET with a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 90A, and a gate-source voltage (Vgs) of -30V. It is available in a TO-247AC package.
Features:
- Low on-resistance (Rds(on)): 4.5 mOhm max
- High input impedance
- Low gate charge (Qg): 34nC max
- Low switching losses
- Avalanche rugged safe operating area (SOA)
- Built-in bootstrap diode
Applications:
- Motor control
- Power supplies
- Battery management systems
- Inverters
- Switch mode power supplies (SMPS)
- Class D audio amplifiers
- LED lighting
The RS1L120GNTB is a high-performance MOSFET that offers excellent electrical characteristics and reliability. Its low on-resistance and high input impedance make it suitable for use in a wide range of power electronics applications. Additionally, its built-in bootstrap diode and avalanche rugged SOA provide added protection and reliability in demanding applications.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.26628 | $2.27 |
| 10+ | $2.20972 | $22.10 |
| 30+ | $2.17028 | $65.11 |
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