ROHM Semiconductor
RS1L180GNTB

278-RS1L180GNTB
PDF Datasheet
MOSFET N-CH 60V 18A/68A 8HSOP
21 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3230 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Product Status
Active
Supplier Device Package
8-HSOP
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
3W (Ta)
Package / Case
8-PowerTDFN
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RS1L180GNTB Description

RS1L180GNTB Description

The RS1L180GNTB is a high-performance MOSFET (Metal Oxide) from ROHM Semiconductor, designed for applications requiring high current and voltage handling capabilities. This N-Channel MOSFET features a drain-to-source voltage (Vdss) of 60V, making it suitable for a wide range of power electronics applications. With a continuous drain current rating of 18A at 25°C and 68A at Tc, the RS1L180GNTB can handle significant power loads while maintaining high efficiency.

RS1L180GNTB Features

  • High Input Capacitance (Ciss): The RS1L180GNTB boasts a maximum input capacitance of 3230 pF at 30V, ensuring fast switching speeds and improved performance in high-frequency applications.
  • Low Gate Charge (Qg): With a maximum gate charge of 63 nC at 10V, this MOSFET minimizes power losses and reduces switching times, contributing to overall system efficiency.
  • Robust Operating Temperature: The RS1L180GNTB can operate at temperatures up to 150°C (TJ), making it suitable for demanding environments and applications where thermal management is critical.
  • Surface Mount Technology: The device is packaged in an 8-pin HSOP package, allowing for easy integration into surface mount applications and providing a compact footprint for space-constrained designs.
  • Compliance with Industry Standards: The RS1L180GNTB is compliant with RoHS3 standards, ensuring environmental responsibility and adherence to global regulations.

RS1L180GNTB Applications

The RS1L180GNTB is ideal for a variety of applications where high current and voltage handling are required, including:

  • Power Supplies: Due to its high voltage and current ratings, the RS1L180GNTB is well-suited for use in power supply designs, particularly in applications requiring high efficiency and reliability.
  • Motor Controls: The device's robust current handling capabilities make it an excellent choice for motor control applications, where precise control and high power efficiency are critical.
  • Automotive Electronics: The RS1L180GNTB's ability to operate at high temperatures and handle significant power loads makes it suitable for automotive electronics, such as electric vehicle components and power management systems.

Conclusion of RS1L180GNTB

In conclusion, the RS1L180GNTB from ROHM Semiconductor is a high-performance MOSFET that offers a combination of high current and voltage handling capabilities, fast switching speeds, and robust operating temperature range. Its compliance with industry standards and compact surface mount package make it an ideal choice for a wide range of power electronics applications, including power supplies, motor controls, and automotive electronics. With its unique features and advantages over similar models, the RS1L180GNTB is a reliable and efficient solution for demanding power electronics designs.

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