ROHM Semiconductor_RUC002N05HZGT116
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ROHM Semiconductor
RUC002N05HZGT116

278-RUC002N05HZGT116
PDF Datasheet
MOSFET N-CH 50V 200MA SST3
21 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V
Product Status
Active
Supplier Device Package
SST3
Drain to Source Voltage (Vdss)
50 V
Power Dissipation (Max)
350mW (Ta)
Package / Case
TO-236-3, SC-59, SOT-23-3
Technology
MOSFET (Metal Oxide)
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RUC002N05HZGT116 Description

RUC002N05HZGT116 Description

The RUC002N05HZGT116 is a high-performance MOSFET N-CH 50V 200mA SST3 from ROHM Semiconductor. This single FET offers superior technical specifications, making it an ideal choice for various applications in the electronics industry. With a maximum drain-source voltage of 50V and a continuous drain current of 200mA at 25°C, the RUC002N05HZGT116 delivers excellent performance in demanding environments.

RUC002N05HZGT116 Features

  • Input Capacitance (Ciss): 25 pF @ 10V
  • Product Status: Active
  • Supplier Device Package: SST3
  • Drain to Source Voltage (Vdss): 50V
  • Power Dissipation (Max): 350mW (Ta)
  • Technology: MOSFET (Metal Oxide)
  • REACH Status: REACH Unaffected
  • Manufacturer: Rohm Semiconductor
  • Vgs (Max): ±8V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99
  • Grade: Automotive
  • Mounting Type: Surface Mount
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • HTSUS: 8541.21.0095
  • Package: Tape & Reel (TR)
  • Base Product Number: RUC002

RUC002N05HZGT116 Applications

The RUC002N05HZGT116 is ideal for various applications where high performance and reliability are critical. Some specific use cases include:

  1. Automotive Electronics: Due to its automotive grade and high operating temperature, the RUC002N05HZGT116 is perfect for automotive applications such as power windows, seat controls, and lighting systems.
  2. Industrial Control Systems: The high drain-source voltage and continuous drain current make it suitable for industrial control systems, where high voltage and current handling are required.
  3. Power Management: The RUC002N05HZGT116 can be used in power management applications, such as battery management systems and power supply circuits, due to its high power dissipation capability.

Conclusion of RUC002N05HZGT116

The RUC002N05HZGT116 from ROHM Semiconductor is a high-performance MOSFET N-CH 50V 200mA SST3 that offers superior technical specifications and performance benefits. Its unique features, such as high drain-source voltage, continuous drain current, and automotive grade, make it an ideal choice for various applications in the electronics industry. With its excellent performance and reliability, the RUC002N05HZGT116 is a valuable addition to any design engineer's toolbox.

FAQ

Is RUC002N05HZGT116 currently in stock?
Yes. RUC002N05HZGT116 currently shows 10454 unit(s) in stock.
What voltage specification is listed for RUC002N05HZGT116?
What operating temperature range does RUC002N05HZGT116 support?
What package or case is RUC002N05HZGT116 available in?
What is the standard lead time for RUC002N05HZGT116?
Availability (In Stock : 10454 )
Quantity Unit Price Ext. Price
10+ $0.05472 $0.55
100+ $0.04400 $4.40
300+ $0.03864 $11.59
3000+ $0.03461 $103.83
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