ROHM Semiconductor_RUE002N02TL
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ROHM Semiconductor
RUE002N02TL

278-RUE002N02TL
PDF Datasheet
MOSFET N-CH 20V 200MA EMT3
21 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V
Product Status
Active
Supplier Device Package
EMT3
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
150mW (Ta)
Package / Case
SC-75, SOT-416
Technology
MOSFET (Metal Oxide)
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RUE002N02TL Description

RUE002N02TL Description

The RUE002N02TL is a high-performance N-Channel MOSFET from ROHM Semiconductor, designed to meet the demands of modern electronic applications. With a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 200mA at 25°C, this MOSFET is ideal for a wide range of applications. The device is housed in a compact EMT3 package, making it suitable for surface mount applications. The RUE002N02TL is also compliant with the latest environmental regulations, including ROHS3 and REACH.

RUE002N02TL Features

  • Technology: MOSFET (Metal Oxide) - Offers excellent electrical performance and reliability.
  • Input Capacitance (Ciss): 25 pF @ 10V - Minimizes input capacitance for faster switching speeds.
  • Vgs (Max): ±8V - Provides a wide voltage range for gate control.
  • Rds On (Max): 1.2 Ohm @ 200mA, 2.5V - Ensures low on-resistance for efficient power dissipation.
  • Vgs(th) (Max): 1V @ 1mA - Facilitates easy gate drive and control.
  • Power Dissipation (Max): 150mW (Ta) - Allows for efficient heat dissipation in various operating conditions.
  • Operating Temperature: 150°C (TJ) - Enables operation in high-temperature environments.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Provides excellent moisture resistance for reliable performance in humid conditions.

RUE002N02TL Applications

The RUE002N02TL's unique combination of high voltage, low on-resistance, and compact package make it ideal for a variety of applications, including:

  1. Power Management: In power supply circuits, the RUE002N02TL can efficiently manage and regulate power distribution.
  2. Motor Control: The device's high voltage and current capabilities make it suitable for controlling motor speed and direction in various applications.
  3. Audio Amplifiers: The RUE002N02TL can be used in audio amplifiers to provide high-quality sound reproduction with minimal distortion.
  4. Automotive Electronics: The device's high temperature and moisture resistance make it ideal for use in automotive electronics, such as engine control units and infotainment systems.

Conclusion of RUE002N02TL

The RUE002N02TL from ROHM Semiconductor is a versatile and high-performance N-Channel MOSFET that offers excellent electrical characteristics and reliability. Its compact EMT3 package, combined with its wide voltage range and low on-resistance, make it an ideal choice for a variety of applications, including power management, motor control, audio amplifiers, and automotive electronics. With its compliance to environmental regulations and robust performance in high-temperature and humid conditions, the RUE002N02TL is a reliable and efficient solution for your electronic design needs.

FAQ

What voltage specification is listed for RUE002N02TL?
The listed voltage-related specification for RUE002N02TL is 20 V.
What operating temperature range does RUE002N02TL support?
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