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RUF025N02TL

RUF025N02TL Description

The RUF025N02TL from ROHM Semiconductor is an N-channel MOSFET designed for high-efficiency power management in compact, surface-mount applications. With a 20V drain-to-source voltage (Vdss) and 2.5A continuous drain current (Id), this MOSFET is optimized for low-voltage, high-current switching. Its TUMT3 package ensures minimal footprint while delivering robust performance, making it ideal for space-constrained designs. The device operates within a wide temperature range of up to 150°C (TJ) and features a low Rds(on) of 54mΩ at 4.5V Vgs, ensuring minimal conduction losses.

RUF025N02TL Features

• Low On-Resistance: 54mΩ @ 2.5A, 4.5V for reduced power dissipation.
• Fast Switching: Low gate charge (Qg) of 5nC @ 4.5V and input capacitance (Ciss) of 370pF @ 10V enhance switching efficiency.
• Compact & Reliable: TUMT3 package (ultra-small 1.0x0.6mm) with MSL1 (unlimited shelf life) for easy handling.
• Wide Vgs Range: ±10V gate drive tolerance for flexibility in circuit design.
• RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.
• Low Threshold Voltage: 1.3V @ 1mA ensures compatibility with low-voltage logic.

RUF025N02TL Applications

This MOSFET excels in portable electronics, power management modules, and battery-powered systems, including:

• Load switches and DC-DC converters in smartphones/tablets.
• Motor control in compact IoT devices.
• Power distribution in wearables and USB-C PD circuits.
• Battery protection circuits due to its low Rds(on) and high efficiency.

Conclusion of RUF025N02TL

The RUF025N02TL stands out for its ultra-low Rds(on), compact form factor, and high current capability, making it a superior choice for modern low-voltage, high-density designs. Its fast switching and thermal resilience ensure reliability in demanding applications, while ROHM's quality assurance guarantees long-term performance. Ideal for engineers seeking efficiency and miniaturization without compromising power handling.