ROHM Semiconductor_RUR040N02TL
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ROHM Semiconductor
RUR040N02TL

278-RUR040N02TL
PDF Datasheet
MOSFET N-CH 20V 4A TSMT3
21 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 4.5 V
Product Status
Active
Supplier Device Package
TSMT3
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
1W (Ta)
Package / Case
SC-96
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RUR040N02TL Description

RUR040N02TL Description

The RUR040N02TL is a high-performance MOSFET N-CH 20V 4A TSMT3 from ROHM Semiconductor. This single FET is designed for applications requiring high power dissipation, low on-resistance, and high input capacitance. With its advanced MOSFET technology, the RUR040N02TL offers excellent electrical characteristics and reliability.

RUR040N02TL Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power loss.
  • Input Capacitance (Ciss): 680 pF @ 10 V - Minimizes input capacitance for faster switching speeds.
  • Gate Charge (Qg): 8 nC @ 4.5 V - Reduces switching losses and improves efficiency.
  • Drain to Source Voltage (Vdss): 20 V - Suitable for high-voltage applications.
  • Power Dissipation (Max): 1W (Ta) - Capable of handling high power dissipation.
  • Rds On (Max): 35mOhm @ 4A, 4.5V - Offers low on-resistance for high current applications.
  • Vgs(th) (Max): 1.3V @ 1mA - Ensures reliable gate control.
  • Current - Continuous Drain (Id): 4A (Ta) - Supports high continuous current.
  • Operating Temperature: 150°C (TJ) - Suitable for high-temperature applications.
  • RoHS Status: ROHS3 Compliant - Environmentally friendly and compliant with RoHS regulations.
  • REACH Status: REACH Unaffected - Compliant with REACH regulations.

RUR040N02TL Applications

The RUR040N02TL is ideal for various applications where high power dissipation, low on-resistance, and high input capacitance are required. Some specific use cases include:

  1. Power Management: In power supply circuits, the RUR040N02TL can efficiently manage high power dissipation and provide stable voltage regulation.
  2. Motor Control: The low on-resistance and high current capability make it suitable for motor control applications, ensuring efficient motor operation.
  3. Industrial Automation: The high-voltage and high-temperature capabilities make the RUR040N02TL suitable for industrial automation systems, where reliability and performance are critical.
  4. Automotive Electronics: The RUR040N02TL can be used in automotive electronics for power management and motor control applications, providing high efficiency and reliability.

Conclusion of RUR040N02TL

The RUR040N02TL from ROHM Semiconductor is a high-performance MOSFET N-CH 20V 4A TSMT3 that offers excellent electrical characteristics, low power loss, and high reliability. Its unique features, such as low on-resistance, high input capacitance, and high power dissipation, make it ideal for various applications, including power management, motor control, industrial automation, and automotive electronics. With its compliance with RoHS and REACH regulations, the RUR040N02TL is not only a high-performance solution but also an environmentally friendly choice for your electronic designs.

FAQ

What voltage specification is listed for RUR040N02TL?
The listed voltage-related specification for RUR040N02TL is 20 V.
What operating temperature range does RUR040N02TL support?
What is RUR040N02TL?
What is the mounting type of RUR040N02TL?
What is the standard lead time for RUR040N02TL?
Availability (In Stock : 17 )
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30+ $0.18395 $5.52
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