ROHM Semiconductor_RUS100N02TB
original

ROHM Semiconductor
RUS100N02TB

278-RUS100N02TB
PDF Datasheet
MOSFET N-CH 20V 10A 8SOP
21 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 4.5 V
Product Status
Active
Supplier Device Package
8-SOP
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
2W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
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RUS100N02TB Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the RUS100N02TB belongs to can be classified under the Discrete Semiconductors. RUS100N02TB is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. RUS100N02TB provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. ROHM Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. ROHM Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, ROHM Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

Are there related or alternative parts for RUS100N02TB?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is the mounting type of RUS100N02TB?
What package or case is RUS100N02TB available in?
What is the standard lead time for RUS100N02TB?
What voltage specification is listed for RUS100N02TB?
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