ROHM Semiconductor_RV2C010UNT2L
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ROHM Semiconductor
RV2C010UNT2L

278-RV2C010UNT2L
PDF Datasheet
MOSFET N-CH 20V 1A DFN1006-3
16 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
Product Status
Active
Supplier Device Package
VML1006
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
400mW (Ta)
Package / Case
SC-101, SOT-883
Technology
MOSFET (Metal Oxide)
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RV2C010UNT2L Description

RV2C010UNT2L Description

The RV2C010UNT2L is a high-performance N-Channel MOSFET designed and manufactured by ROHM Semiconductor. This single FET is part of the MOSFETs category and is known for its robust technical specifications and reliable performance. With a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1A at 25°C, the RV2C010UNT2L is well-suited for various applications requiring efficient power management and switching capabilities.

RV2C010UNT2L Features

  • Technology: Utilizing advanced MOSFET (Metal Oxide) technology, the RV2C010UNT2L offers excellent electrical performance and reliability.
  • Input Capacitance (Ciss): With a maximum input capacitance of 40 pF at 10V, the RV2C010UNT2L ensures fast switching and reduced power consumption.
  • Power Dissipation: Capable of handling a maximum power dissipation of 400mW at ambient temperature, this MOSFET is ideal for applications with moderate power requirements.
  • Operating Temperature: The RV2C010UNT2L can operate at a maximum junction temperature of 150°C, making it suitable for high-temperature environments.
  • Mounting Type: Designed for surface mount applications, this MOSFET is easily integrated into various electronic devices.
  • Rds On (Max): The maximum on-resistance (Rds On) of 470mOhm at 500mA and 4.5V ensures efficient power delivery with minimal losses.
  • Vgs (Max): The RV2C010UNT2L can handle a maximum gate-to-source voltage (Vgs) of ±8V, providing flexibility in gate drive requirements.

RV2C010UNT2L Applications

The RV2C010UNT2L is ideal for a wide range of applications, including:

  • Power Management: Due to its high voltage and current ratings, this MOSFET is suitable for power management circuits in various electronic devices.
  • Motor Control: The RV2C010UNT2L can be used in motor control applications, providing efficient switching and power management.
  • Automotive Electronics: With its ability to operate at high temperatures, this MOSFET is well-suited for automotive electronics, such as power windows and seat controls.
  • Industrial Control: The RV2C010UNT2L can be used in industrial control systems, where high voltage and current ratings are required.

Conclusion of RV2C010UNT2L

The RV2C010UNT2L from ROHM Semiconductor is a high-performance N-Channel MOSFET that offers excellent electrical performance, reliability, and flexibility. Its unique features, such as low input capacitance and high operating temperature, make it an ideal choice for various applications in power management, motor control, automotive electronics, and industrial control. With its robust technical specifications and compliance with RoHS3 standards, the RV2C010UNT2L is a reliable and environmentally friendly solution for your electronic design needs.

FAQ

What is the mounting type of RV2C010UNT2L?
RV2C010UNT2L uses a Surface Mount mounting style based on the listed product specifications.
What is the standard lead time for RV2C010UNT2L?
What operating temperature range does RV2C010UNT2L support?
What voltage specification is listed for RV2C010UNT2L?
Does RV2C010UNT2L have quantity-based pricing?
Availability (In Stock : 12915 )
Quantity Unit Price Ext. Price
50+ $0.09739 $4.87
150+ $0.08560 $12.84
500+ $0.07675 $38.38
2500+ $0.06296 $157.40
5000+ $0.05944 $297.20
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