ROHM Semiconductor Tariff Inquiry

RW1A025APT2CR

RW1A025APT2CR Description

The RW1A025APT2CR is a P-Channel MOSFET from ROHM Semiconductor, designed for high-performance applications. This device features a maximum input capacitance (Ciss) of 2000 pF at 6 V and a maximum gate charge (Qg) of 16 nC at 4.5 V. With a drain-to-source voltage (Vdss) of 12 V and a maximum power dissipation of 400 mW at ambient temperature, the RW1A025APT2CR is well-suited for demanding electronic systems.

RW1A025APT2CR Features

• Technology: MOSFET (Metal Oxide), offering excellent electrical performance and reliability.
• Product Status: Obsolete, indicating that this part may be challenging to source but is still available in limited quantities.
• REACH Status: REACH Unaffected, ensuring compliance with European regulations.
• RoHS Status: ROHS3 Compliant, making it suitable for environmentally conscious designs.
• Moisture Sensitivity Level (MSL): 1 (Unlimited), allowing for flexible storage and handling.
• Operating Temperature: 150°C (TJ), enabling operation in high-temperature environments.
• Mounting Type: Surface Mount, facilitating integration into compact electronic designs.
• Rds On (Max): 62 mOhm at 2.5A, 4.5V, providing low on-resistance for efficient power management.
• Vgs(th) (Max): 1V at 1mA, ensuring reliable gate control.
• Current - Continuous Drain (Id): 2.5A at 25°C, supporting high current applications.
• Drive Voltage: 1.5V to 4.5V, offering flexibility in gate drive requirements.

RW1A025APT2CR Applications

The RW1A025APT2CR is ideal for applications that require high voltage, high current, and low on-resistance. Some specific use cases include:

• Power Management: In power supply circuits, the RW1A025APT2CR can efficiently manage high currents while maintaining low power dissipation.
• Motor Control: The device's high voltage and current capabilities make it suitable for controlling motors in industrial and automotive applications.
• Audio Amplifiers: The RW1A025APT2CR can be used in audio amplifiers to provide high power output with minimal distortion.

Conclusion of RW1A025APT2CR

The RW1A025APT2CR is a high-performance P-Channel MOSFET from ROHM Semiconductor, offering a combination of high voltage, high current, and low on-resistance. Its unique features, such as low gate charge and high input capacitance, make it an excellent choice for demanding applications in power management, motor control, and audio amplification. Although the product is now obsolete, its performance benefits and compliance with environmental regulations make it a valuable option for existing designs.