ROHM Semiconductor_RZE002P02TL
original

ROHM Semiconductor
RZE002P02TL

278-RZE002P02TL
PDF Datasheet
MOSFET P-CH 20V 200MA EMT3
21 Weeks

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Tech Specifications

FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
115 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 4.5 V
Product Status
Not For New Designs
Supplier Device Package
EMT3
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
150mW (Ta)
Package / Case
SC-75, SOT-416
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RZE002P02TL Description

RZE002P02TL Description

The RZE002P02TL is a high-performance P-Channel MOSFET from ROHM Semiconductor, designed for use in a wide range of electronic applications. With a maximum drain-source voltage of 20V and a continuous drain current of 200mA at 25°C, this MOSFET offers excellent electrical performance. It features a low on-resistance of 1.2Ω at 200mA and 4.5V, ensuring minimal power loss and high efficiency. The RZE002P02TL is designed for surface mount applications and is available in a compact EMT3 package, making it ideal for space-constrained designs.

RZE002P02TL Features

  • P-Channel MOSFET with 20V drain-source voltage and 200mA continuous drain current
  • Low on-resistance of 1.2Ω at 200mA and 4.5V for high efficiency
  • Surface mount design with compact EMT3 package
  • Maximum gate-source voltage of ±10V for reliable operation
  • Maximum power dissipation of 150mW at ambient temperature
  • Operating temperature range of -55°C to 150°C (TJ)
  • REACH unaffected and RoHS3 compliant for environmental compliance
  • Moisture sensitivity level 1 (unlimited) for reliable storage and handling

RZE002P02TL Applications

The RZE002P02TL is ideal for use in various electronic applications where high performance and reliability are required. Some specific use cases include:

  1. Power management and control circuits in consumer electronics
  2. Motor control and drive applications in industrial automation systems
  3. Audio amplifiers and signal processing circuits in professional audio equipment
  4. Battery management systems in electric vehicles and energy storage systems
  5. Protection circuits in power supplies and chargers

Conclusion of RZE002P02TL

The RZE002P02TL from ROHM Semiconductor is a high-performance P-Channel MOSFET that offers excellent electrical characteristics, making it suitable for a wide range of applications. Its low on-resistance, high voltage capability, and compact package size make it an ideal choice for space-constrained designs. With its REACH unaffected and RoHS3 compliant status, the RZE002P02TL is also an environmentally friendly option for designers looking to meet strict regulations. Overall, the RZE002P02TL is a reliable and efficient solution for various electronic applications requiring high performance and reliability.

FAQ

What operating temperature range does RZE002P02TL support?
RZE002P02TL has an operating temperature range of 150°C (TJ).
What package or case is RZE002P02TL available in?
What is the mounting type of RZE002P02TL?
Is RZE002P02TL currently in stock?
What is RZE002P02TL?
Availability (In Stock : 6608 )
Quantity Unit Price Ext. Price
10+ $0.08053 $0.81
100+ $0.06704 $6.70
300+ $0.06031 $18.09
3000+ $0.05525 $165.75
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