ROHM Semiconductor_SH8K32TB1
original

ROHM Semiconductor
SH8K32TB1

289-SH8K32TB1
PDF Datasheet
MOSFET 2N-CH 60V 4.5A 8SOP

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Tech Specifications

Operating Temperature
150°C (TJ)
FET Feature
Logic Level Gate
Configuration
2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds
500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
10nC @ 5V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Not For New Designs
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SH8K32TB1 Description

SH8K32TB1 Description

The SH8K32TB1 is a high-performance MOSFET (Metal Oxide) device manufactured by ROHM Semiconductor. It features a 2N-CH configuration with a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 4.5A at 25°C. The device is designed for surface mount applications and is packaged in an 8-pin SOP (Small Outline Package). With a maximum power dissipation of 2W, the SH8K32TB1 is suitable for various power management and switching applications.

SH8K32TB1 Features

  • Operating Temperature: The SH8K32TB1 can operate at a maximum junction temperature (TJ) of 150°C, making it suitable for high-temperature environments.
  • FET Feature: The device features a logic level gate, which allows for easy integration with digital logic circuits.
  • Input Capacitance (Ciss): The maximum input capacitance is 500pF at a drain-source voltage (Vds) of 10V.
  • Gate Charge (Qg): The maximum gate charge is 10nC at a gate-source voltage (Vgs) of 5V.
  • Rds On (Max): The maximum on-resistance (Rds(on)) is 65mOhm at a drain current (Id) of 4.5A and a gate-source voltage (Vgs) of 10V.
  • Vgs(th) (Max): The maximum threshold voltage (Vgs(th)) is 2.5V at a drain current (Id) of 1mA.
  • Technology: The SH8K32TB1 is based on MOSFET technology, offering high efficiency and low power consumption.
  • Power - Max: The device can dissipate a maximum power of 2W, making it suitable for various power management applications.
  • Moisture Sensitivity Level (MSL): The MSL rating is 1 (Unlimited), indicating that the device is not sensitive to moisture and can be stored without special precautions.

SH8K32TB1 Applications

The SH8K32TB1 is ideal for various applications where high efficiency, low power consumption, and high-temperature operation are required. Some specific use cases include:

  1. Power Management: The device can be used in power management circuits, such as voltage regulators and converters, due to its low on-resistance and high current capability.
  2. Motor Control: The SH8K32TB1 can be used in motor control applications, such as brushless DC motors, where high efficiency and low power consumption are critical.
  3. Automotive Applications: The high-temperature operation capability makes the SH8K32TB1 suitable for automotive applications, such as engine control units and powertrain systems.

Conclusion of SH8K32TB1

The SH8K32TB1 is a versatile MOSFET device that offers high efficiency, low power consumption, and high-temperature operation capabilities. Its unique features, such as the logic level gate and low on-resistance, make it an ideal choice for power management, motor control, and automotive applications. While it is not recommended for new designs, the SH8K32TB1 remains a reliable option for existing systems that require its specific performance characteristics.

FAQ

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Availability (In Stock : 44 )
Quantity Unit Price Ext. Price
1+ $3.11640 $3.12
10+ $2.66300 $26.63
30+ $2.38040 $71.41
100+ $2.08960 $208.96
500+ $1.95820 $979.10
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Unit Price $3.11640
Subtotal $3.12
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