ROHM Semiconductor_SP8K80TB1
original

ROHM Semiconductor
SP8K80TB1

289-SP8K80TB1
PDF Datasheet
MOSFET 2N-CH 500V 0.5A 8SOP
16 Weeks

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Tech Specifications

Configuration
2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)
25
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
23.5pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
3.8nC @ 10V
Typical Rise Time (ns)
18
PPAP
No
Channel Mode
Enhancement
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SP8K80TB1 Description

SP8K80TB1 Description

The SP8K80TB1 is a high-performance MOSFET (Metal Oxide) device manufactured by ROHM Semiconductor. This 2N-CH MOSFET is designed to operate at a drain-source voltage (Vdss) of up to 500V, making it suitable for high-voltage applications. With a continuous drain current (Id) of 0.5A at 25°C, the SP8K80TB1 can handle significant power dissipation, making it ideal for various power electronics applications. The device is surface mountable, ensuring easy integration into modern electronic systems.

SP8K80TB1 Features

  • Input Capacitance (Ciss): The SP8K80TB1 has a maximum input capacitance of 23.5pF at 25V, ensuring fast switching speeds and minimal signal distortion.
  • Gate Charge (Qg): With a maximum gate charge of 3.8nC at 10V, the SP8K80TB1 offers efficient gate control, reducing power consumption and improving overall performance.
  • Rds On (Max): The device has a maximum on-resistance (Rds On) of 11.7Ohm at 250mA and 10V, ensuring low power loss and high efficiency in conduction.
  • Vgs(th) (Max): The SP8K80TB1 has a maximum threshold voltage (Vgs(th)) of 5V at 1mA, providing reliable operation across a wide range of input voltages.
  • Power - Max: The device can handle a maximum power dissipation of 2W at ambient temperature (Ta), making it suitable for various power electronics applications.
  • Package: The SP8K80TB1 is available in an 8-pin SOP package, making it easy to integrate into surface-mount applications.
  • RoHS Compliance: The device is compliant with the ROHS3 standard, ensuring environmental friendliness and adherence to global regulations.

SP8K80TB1 Applications

The SP8K80TB1 is ideal for various high-voltage and power electronics applications, including:

  1. Power Supplies: The high drain-source voltage and low on-resistance make it suitable for power supply designs, such as SMPS (Switched-Mode Power Supplies) and linear regulators.
  2. Motor Control: The device's high voltage and current ratings make it ideal for motor control applications, such as brushless DC motors and stepper motors.
  3. Industrial Automation: The SP8K80TB1 can be used in industrial automation systems, such as robotic arms and conveyor belts, where high-voltage and high-current switching is required.
  4. Automotive Electronics: The device's robustness and high-voltage capabilities make it suitable for automotive applications, such as electric power steering and battery management systems.

Conclusion of SP8K80TB1

The SP8K80TB1 is a versatile and high-performance MOSFET device from ROHM Semiconductor, offering a combination of high voltage, low on-resistance, and fast switching capabilities. Its surface-mount package and RoHS compliance make it an ideal choice for a wide range of power electronics applications, including power supplies, motor control, industrial automation, and automotive electronics. With its unique features and advantages over similar models, the SP8K80TB1 is a reliable and efficient solution for demanding high-voltage applications.

FAQ

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The standard lead time for SP8K80TB1 is 16 Weeks.
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Availability (In Stock : 5 )
Quantity Unit Price Ext. Price
1+ $2.26800 $2.27
10+ $2.21143 $22.11
30+ $2.17200 $65.16
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