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UMH3NTN

UMH3NTN Description

The UMH3NTN is a Bipolar Transistor Array from ROHM Semiconductor, designed for pre-biased applications. It features a 2NPN configuration and offers a power rating of 0.15W. This surface-mount device is available in a UMT6 package and is compliant with the RoHS3 standard. With a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, the UMH3NTN is suitable for a wide range of applications.

UMH3NTN Features

• 250MHz frequency transition
• 100mA maximum collector current (Ic)
• 4.7kOhms base resistor (R1)
• 300mV Vce saturation at 250µA, 5mA
• EAR99 ECCN classification
• Active product status
• 150mW maximum power dissipation
• REACH unaffected status
• UMT6 supplier device package
• Tape & reel (TR) packaging
• 100 minimum DC current gain (hFE) at 1mA, 5V
• UMH3 base product number
• Moisture sensitivity level (MSL) 1 (unlimited)

UMH3NTN Applications

The UMH3NTN is ideal for various applications, including:

1. Audio and video signal processing
2. Low-power switching and amplification circuits
3. Consumer electronics, such as smartphones and tablets
4. Industrial control systems
5. Automotive electronics

Conclusion of UMH3NTN

The UMH3NTN from ROHM Semiconductor is a versatile Bipolar Transistor Array that offers excellent performance and reliability. Its unique features, such as a 250MHz frequency transition and 100mA maximum collector current, make it suitable for a wide range of applications. With its RoHS3 compliance and REACH unaffected status, the UMH3NTN is an environmentally friendly choice for your electronic designs. Its high DC current gain and low Vce saturation make it an ideal choice for audio and video signal processing, as well as low-power switching and amplification circuits.