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ZDX130N50

ZDX130N50 Description

The ZDX130N50 is a high-performance N-Channel MOSFET from ROHM Semiconductor, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 500V and continuous drain current (Id) of 13A at 25°C, this device is ideal for demanding power electronics applications. The ZDX130N50 features a low on-resistance (Rds On) of 520mOhm at 6.5A and 10V, ensuring efficient power dissipation and minimal power loss. The device is mounted in a through-hole TO220FM package, making it suitable for a wide range of applications.

ZDX130N50 Features

• N-Channel MOSFET with 500V drain-to-source voltage (Vdss)
• Continuous drain current (Id) of 13A at 25°C
• Low on-resistance (Rds On) of 520mOhm at 6.5A and 10V
• Through-hole TO220FM package
• Maximum gate-source voltage (Vgs) of ±30V
• Maximum gate charge (Qg) of 40nC at 10V
• Maximum input capacitance (Ciss) of 2180pF at 25V
• Maximum power dissipation of 40W (Tc)
• Operating temperature range of -55°C to 150°C (TJ)
• REACH unaffected and RoHS3 compliant
• Moisture sensitivity level (MSL) of 1 (unlimited)

ZDX130N50 Applications

The ZDX130N50 is well-suited for a variety of high-voltage and high-current applications, including:

1. Power supplies and converters
2. Motor control and drives
3. Automotive electronics
4. Industrial control systems
5. Renewable energy systems, such as solar inverters and wind power converters

Conclusion of ZDX130N50

The ZDX130N50 from ROHM Semiconductor is a robust and reliable N-Channel MOSFET designed for high-voltage and high-current applications. Its low on-resistance, high power dissipation capabilities, and wide operating temperature range make it an ideal choice for demanding power electronics applications. With its REACH unaffected and RoHS3 compliant status, the ZDX130N50 is an environmentally friendly option for engineers looking to develop sustainable electronic solutions.