Samsung Semiconductor

K4F8E304HB-MGCJ

The Samsung Semiconductor K4F8E304HB-MGCJ is a high-performance, low-power DDR4 SDRAM memory module designed for use in a variety of applications, including servers, workstations, and high-end PCs.

Description:

The K4F8E304HB-MGCJ is a 4GB DDR4 SDRAM module with an 8GB capacity. It operates at a frequency of 2666MHz and has a CAS latency of 19. The module is based on Samsung's advanced 3D TSV (Through-Silicon Via) technology, which allows for high-density integration and improved performance.

Features:

• High-density DDR4 memory module with 8GB capacity
• 2666MHz operating frequency for fast data transfer
• CAS latency of 19 for improved performance
• Based on Samsung's advanced 3D TSV technology for high-density integration
• Low-power design for energy efficiency
• Error-correcting code (ECC) support for reliable data storage
• 288-ball FBGA package for compact form factor

Applications:

The K4F8E304HB-MGCJ is suitable for a wide range of applications that require high-performance memory, including:

1. Servers and data centers
2. High-end workstations
3. Gaming PCs
4. Cloud computing platforms
5. Big data analytics systems
6. Artificial intelligence and machine learning applications
7. High-performance computing (HPC) systems

Overall, the Samsung Semiconductor K4F8E304HB-MGCJ is a high-performance, low-power DDR4 SDRAM memory module that offers reliable and efficient data storage for a variety of applications. Its advanced 3D TSV technology and ECC support make it an ideal choice for demanding environments where data integrity and performance are critical.