SAMSUNG_SSP4N60
original

SAMSUNG
SSP4N60

48-SSP4N60
Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Pin Count
3
Number of Elements
1
REACH
unknown
Military Spec
False

SSP4N60 Description

Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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