


SAMSUNG
SSP4N60
48-SSP4N60
Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Pin Count
3
Number of Elements
1
REACH
unknown
Military Spec
False
SSP4N60 Description
Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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SSP4N60 is a Unclassified from SAMSUNG. This product page provides its main specifications, pricing information, availability, and inquiry options.
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