


Semikron
SEMIX653GAL176HDS
297-SEMIX653GAL176HDS
PDF Datasheet
IGBT MODULE, SINGLE, 1.7KV, 619A; Transistor Polarity:NPN; DC Collector Current:619A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:- ;RoHS Compliant: Yes
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Responsible qualityTech Specifications
Package/Case
Module
Collector Emitter Voltage (VCEO)
1.7kV
Element Configuration
Single
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Mount
Screw
Polarity
NPN
RoHS Compliant
Yes
SEMIX653GAL176HDS Description
IGBT MODULE, SINGLE, 1.7KV, 619A; Transistor Polarity:NPN; DC Collector Current:619A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:- ;RoHS Compliant: Yes
FAQ
What package or case is SEMIX653GAL176HDS available in?
SEMIX653GAL176HDS is available in the Module package / case.
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