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Semikron
SKM200GB12E4
48-SKM200GB12E4
Insulated Gate Bipolar Transistor, 314A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
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Tech Specifications
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
1.2kV
Fall Time
55ns
Height
30mm
Length
106.4mm
Max Collector Current
314A
SKM200GB12E4 Description
Insulated Gate Bipolar Transistor, 314A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
FAQ
What voltage specification is listed for SKM200GB12E4?
The listed voltage-related specification for SKM200GB12E4 is 1.2kV.
What package or case is SKM200GB12E4 available in?
Are there related or alternative parts for SKM200GB12E4?
What is SKM200GB12E4?
What operating temperature range does SKM200GB12E4 support?
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