Semtech_GS12170-IBE3
original

Semtech
GS12170-IBE3

684-GS12170-IBE3
PDF Datasheet
GS12170 SDI/HDMI BRIDGE
26 Weeks

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Tech Specifications

Category
SDI/HDMI Bridge
PCB changed
196
HTS
GS12170-IBE3
ECCN (US)
EAR99
PPAP
No
Product Status
Active
Supplier Device Package
196-BGA (12x12)
Automotive
No
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GS12170-IBE3 Description

The Semtech GS12170-IBE3 is a high-performance, high-voltage, and high-isolation power amplifier designed for use in industrial, scientific, and medical (ISM) applications. It is a gallium nitride (GaN) based device that offers high efficiency and high linearity, making it ideal for a wide range of applications.

Description:

The GS12170-IBE3 is a monolithic microwave integrated circuit (MMIC) that operates in the X-band frequency range from 8 to 12 GHz. It is designed to provide high output power and high gain in a compact form factor. The device is available in a 38-pin ceramic package, making it easy to integrate into a variety of systems.

Features:

  • High output power: The GS12170-IBE3 can deliver up to 17 watts of output power, making it suitable for high-power applications.
  • High gain: The device offers a high gain of 20 dB, which makes it ideal for use in applications where high gain is required.
  • High efficiency: The GS12170-IBE3 is designed to operate with high efficiency, which reduces power consumption and improves overall system performance.
  • High linearity: The device offers high linearity, which is important for applications that require low distortion and high signal quality.
  • Wide frequency range: The GS12170-IBE3 operates in the X-band frequency range from 8 to 12 GHz, making it suitable for a wide range of applications.

Applications:

The GS12170-IBE3 is suitable for a variety of applications, including:

  • Radar systems: The high output power and high gain of the GS12170-IBE3 make it ideal for use in radar systems, where high power and high gain are required.
  • Electronic warfare: The high linearity and high efficiency of the GS12170-IBE3 make it suitable for use in electronic warfare applications, where low distortion and high signal quality are important.
  • Communication systems: The wide frequency range of the GS12170-IBE3 makes it suitable for use in communication systems that operate in the X-band frequency range.
  • Medical imaging: The high output power and high efficiency of the GS12170-IBE3 make it suitable for use in medical imaging applications, where high power and high efficiency are required.

Overall, the Semtech GS12170-IBE3 is a high-performance power amplifier that offers high output power, high gain, high efficiency, and high linearity in a compact form factor. It is suitable for a wide range of applications, including radar systems, electronic warfare, communication systems, and medical imaging.

FAQ

What package or case is GS12170-IBE3 available in?
GS12170-IBE3 is available in the 196-FBGA package / case.
Is GS12170-IBE3 currently in stock?
What is GS12170-IBE3?
What is the standard lead time for GS12170-IBE3?
What voltage specification is listed for GS12170-IBE3?
Availability (In Stock : 272 )
Quantity Unit Price Ext. Price
1+ $95.44972 $95.45
30+ $90.51428 $2715.43
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