Semtech_GS12170-IBE3

Semtech
GS12170-IBE3  
Video Processing ICs

Semtech
GS12170-IBE3
684-GS12170-IBE3
Ersa
Semtech-GS12170-IBE3-datasheets-1230413.pdf
GS12170 SDI/HDMI BRIDGE
In Stock : 270

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GS12170-IBE3 Description

The Semtech GS12170-IBE3 is a high-performance, high-voltage, and high-isolation power amplifier designed for use in industrial, scientific, and medical (ISM) applications. It is a gallium nitride (GaN) based device that offers high efficiency and high linearity, making it ideal for a wide range of applications.

Description:

The GS12170-IBE3 is a monolithic microwave integrated circuit (MMIC) that operates in the X-band frequency range from 8 to 12 GHz. It is designed to provide high output power and high gain in a compact form factor. The device is available in a 38-pin ceramic package, making it easy to integrate into a variety of systems.

Features:

  • High output power: The GS12170-IBE3 can deliver up to 17 watts of output power, making it suitable for high-power applications.
  • High gain: The device offers a high gain of 20 dB, which makes it ideal for use in applications where high gain is required.
  • High efficiency: The GS12170-IBE3 is designed to operate with high efficiency, which reduces power consumption and improves overall system performance.
  • High linearity: The device offers high linearity, which is important for applications that require low distortion and high signal quality.
  • Wide frequency range: The GS12170-IBE3 operates in the X-band frequency range from 8 to 12 GHz, making it suitable for a wide range of applications.

Applications:

The GS12170-IBE3 is suitable for a variety of applications, including:

  • Radar systems: The high output power and high gain of the GS12170-IBE3 make it ideal for use in radar systems, where high power and high gain are required.
  • Electronic warfare: The high linearity and high efficiency of the GS12170-IBE3 make it suitable for use in electronic warfare applications, where low distortion and high signal quality are important.
  • Communication systems: The wide frequency range of the GS12170-IBE3 makes it suitable for use in communication systems that operate in the X-band frequency range.
  • Medical imaging: The high output power and high efficiency of the GS12170-IBE3 make it suitable for use in medical imaging applications, where high power and high efficiency are required.

Overall, the Semtech GS12170-IBE3 is a high-performance power amplifier that offers high output power, high gain, high efficiency, and high linearity in a compact form factor. It is suitable for a wide range of applications, including radar systems, electronic warfare, communication systems, and medical imaging.

Tech Specifications

Category
PCB changed
HTS
ECCN (US)
PPAP
Product Status
Supplier Device Package
Automotive
Function
Supplier Package
Package / Case
Voltage - Supply
Mfr
Control Interface
EU RoHS
Interface Type
Moisture Sensitivity Level (MSL)
Applications
ECCN
Mounting Type
Standard Package Name
Standards
Pin Count
Mounting
Series
Part Status
HTSUS
Package
Mounting Style
Product
RoHS
Supply Voltage - Min
Minimum Operating Temperature
Moisture Sensitive
Operating Supply Voltage
Maximum Operating Temperature
Supply Voltage - Max
USHTS

GS12170-IBE3 Documents

Download datasheets and manufacturer documentation for GS12170-IBE3

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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