Sensitron Semiconductor_JAN1N5556
Sensitron Semiconductor_JAN1N5556
original

Sensitron Semiconductor
JAN1N5556

144-JAN1N5556
PDF Datasheet
Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin DO-13
20 weeks

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Tech Specifications

Peak Pulse Power Dissipation (W)
1500
Configuration
Single
PCB changed
2
HTS
8541.10.00.80
Number of Elements per Chip
1
ECCN (US)
EAR-99
Minimum Breakdown Voltage (V)
43.7
PPAP
No
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JAN1N5556 Description

Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin DO-13

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