Sharp Microelectronics_LH28F320S3HNS-ZM
Sharp Microelectronics_LH28F320S3HNS-ZM
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Sharp Microelectronics
LH28F320S3HNS-ZM

774-LH28F320S3HNS-ZM
PDF Datasheet
IC FLASH 32MBIT PARALLEL 56SSOP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
4M x 8, 2M x 16
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
56-SSOP
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LH28F320S3HNS-ZM Description

LH28F320S3HNS-ZM Description

The LH28F320S3HNS-ZM is a 32Mbit FLASH memory IC designed by Sharp Microelectronics, featuring a parallel memory interface and a 56-pin SSOP package. This memory IC is organized as 4M x 8 or 2M x 16, providing flexibility in system design. It operates within a supply voltage range of 2.7V to 3.6V and offers an access time of 110 ns, with a write cycle time of 110 ns for both word and page operations. The device is designed for surface-mount applications and is packaged in trays, ensuring ease of handling and integration into various electronic systems. Although the LH28F320S3HNS-ZM is now obsolete, it remains a notable component in the history of memory technology due to its performance and reliability.

LH28F320S3HNS-ZM Features

  • Memory Size and Organization: The LH28F320S3HNS-ZM provides a substantial 32Mbit memory capacity, organized as 4M x 8 or 2M x 16. This configuration allows for efficient data storage and retrieval, making it suitable for applications requiring large amounts of non-volatile memory.
  • Parallel Interface: The parallel memory interface ensures high-speed data transfer, which is critical for applications that require rapid access to large data sets. This feature enhances the overall performance of systems that rely on quick data processing.
  • Fast Access and Write Times: With an access time of 110 ns and a write cycle time of 110 ns, the LH28F320S3HNS-ZM delivers rapid data read and write capabilities. This speed is essential for applications that demand quick response times and efficient data handling.
  • Wide Voltage Range: The device operates within a supply voltage range of 2.7V to 3.6V, providing flexibility in power supply design and ensuring compatibility with a variety of power sources.
  • Surface-Mount Technology: The LH28F320S3HNS-ZM is designed for surface-mount applications, which reduces the overall footprint on the PCB and allows for higher component density. This is particularly beneficial in compact and space-constrained designs.
  • Moisture Sensitivity Level: With an MSL of 1 (Unlimited), the LH28F320S3HNS-ZM is highly resistant to moisture, making it suitable for use in various environmental conditions without the need for special handling or storage precautions.

LH28F320S3HNS-ZM Applications

The LH28F320S3HNS-ZM is ideal for a range of applications that require reliable and high-speed non-volatile memory. Some specific use cases include:

  • Embedded Systems: The fast access and write times, combined with the parallel interface, make this memory IC suitable for embedded systems that require quick data processing and storage.
  • Industrial Control Systems: The robustness and reliability of the LH28F320S3HNS-ZM make it a good fit for industrial control systems where data integrity and quick response times are crucial.
  • Telecommunications: In telecommunication equipment, the LH28F320S3HNS-ZM can be used for storing firmware and critical data, ensuring fast access and reliable operation.
  • Consumer Electronics: The device can be integrated into consumer electronics products that require non-volatile memory for storing user data, settings, or firmware updates.

Conclusion of LH28F320S3HNS-ZM

The LH28F320S3HNS-ZM, produced by Sharp Microelectronics, is a high-performance FLASH memory IC that offers significant advantages over similar models. Its 32Mbit capacity, fast access and write times, and parallel interface make it a reliable choice for applications that demand efficient data storage and retrieval. Despite its obsolescence, the LH28F320S3HNS-ZM remains a testament to the advancements in memory technology and continues to serve as a benchmark for future developments in the field.

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