SMARTsemi_KTDM4G4B626BGCEAT
original

SMARTsemi
KTDM4G4B626BGCEAT

774-KTDM4G4B626BGCEAT
PDF Datasheet
DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Commercial

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Mounting Style
SMD/SMT
Organization
256 M x 16
Data Bus Width
16 bit
ECCN
EAR99
RoHS
RoHS Compliant
Supply Voltage - Min
1.14 V
Minimum Operating Temperature
0 C
Series
KTDM
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KTDM4G4B626BGCEAT Description

This electronic part puts Tray method in the first place. Packaging method of this KTDM4G4B626BGCEAT aims to use on multiple product types and build brand identity. This KTDM4G4B626BGCEAT is produced by this SMARTsemi and this manufacturer aims to provide original and genuine products to consumers. The vision of this SMARTsemi establishes a strong ability to deliver goods in stock and meet customers' needs for one-stop procurement. This KTDM4G4B626BGCEAT is a member of Memory ICs Products category. It falls under the category of Memory IC Chips. Any integrated circuit with the capability to store bits of data in memory cells within a memory array. The main function of memory IC is the storing and retrieval of such electronic data. This KTDM4G4B626BGCEAT is mainly applied in memory-based electronic devices such as mobile phones, computers, tablets, medical devices, smart cards, digital cameras, communication equipment, and other digital electronic devices.

FAQ

What voltage specification is listed for KTDM4G4B626BGCEAT?
The listed voltage-related specification for KTDM4G4B626BGCEAT is 1.14 V.
What is the mounting type of KTDM4G4B626BGCEAT?
Are there related or alternative parts for KTDM4G4B626BGCEAT?
Is KTDM4G4B626BGCEAT currently in stock?
What is KTDM4G4B626BGCEAT?
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