Solid State Inc._2N5415
original

Solid State Inc.
2N5415

276-2N5415
PDF Datasheet
TRANS PNP 200V 1A TO39

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Tech Specifications

Operating Temperature
200°C (TJ)
Frequency - Transition
15MHz
Current - Collector (Ic) (Max)
1 A
Vce Saturation (Max) @ Ib, Ic
2.5V @ 5mA, 50mA
ECCN
EAR99
Mounting Type
Through Hole
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
200 V
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2N5415 Description

2N5415 Description

The 2N5415 from Solid State Inc. is a high-performance PNP bipolar junction transistor (BJT) designed for robust operation in demanding electronic circuits. With a collector-emitter breakdown voltage (VCEO) of 200V and a maximum collector current (IC) of 1A, this transistor is engineered for medium-power switching and amplification applications. Its transition frequency (fT) of 15MHz ensures reliable performance in high-frequency circuits, while the low collector cutoff current (ICEO) of 50µA minimizes leakage, enhancing efficiency. Packaged in a TO-39 metal can, the 2N5415 offers excellent thermal stability, supporting an operating junction temperature (TJ) of up to 200°C.

2N5415 Features

  • High Voltage Tolerance: 200V VCEO for use in high-voltage circuits.
  • Medium-Power Handling: 1A continuous collector current and 1W power dissipation.
  • Low Saturation Voltage: 2.5V max at 5mA IB and 50mA IC, reducing power loss in switching applications.
  • Stable DC Current Gain (hFE): Minimum 30 at 50mA IC and 10V VCE, ensuring consistent amplification.
  • Robust Construction: TO-39 package with ROHS3 compliance and EAR99 ECCN classification for global usability.
  • Wide Temperature Range: Operates reliably from -65°C to 200°C, suitable for harsh environments.

2N5415 Applications

The 2N5415 excels in:

  • Power Supply Circuits: Voltage regulation and switching due to its high VCEO and low saturation voltage.
  • Audio Amplifiers: Delivers stable gain in Class AB/B amplifier stages.
  • Industrial Controls: Motor drivers, relay drivers, and solenoid control systems.
  • High-Temperature Environments: Automotive and aerospace systems where thermal resilience is critical.
  • Signal Processing: RF and intermediate-frequency (IF) stages in communication equipment.

Conclusion of 2N5415

The 2N5415 PNP transistor stands out for its high-voltage capability, thermal stability, and reliable switching performance, making it a versatile choice for power and amplification tasks. Its TO-39 package ensures durability, while ROHS3 compliance aligns with modern environmental standards. Ideal for engineers seeking a cost-effective, high-performance BJT for industrial, automotive, or communication applications, the 2N5415 delivers consistent results under demanding conditions.

FAQ

What voltage specification is listed for 2N5415?
The listed voltage-related specification for 2N5415 is 200 V.
Is 2N5415 currently in stock?
What package or case is 2N5415 available in?
What is the mounting type of 2N5415?
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