STMicroelectronics_2N2907AUB1

STMicroelectronics
2N2907AUB1  
Single Bipolar Transistors

STMicroelectronics
2N2907AUB1
276-2N2907AUB1
Ersa
STMicroelectronics-2N2907AUB1-datasheets-6714916.pdf
RAD-HARD 60 V, 0.6 A PNP TRANSIS
In Stock : 21

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ISO9001
Quality Policy
ISO45001
ISO14001

2N2907AUB1 Description

Tray provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single Bipolar Transistors that the 2N2907AUB1 belongs to can be classified under the Discrete Semiconductors. 2N2907AUB1 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. 2N2907AUB1 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
Maximum Emitter Base Voltage (V)
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
SVHC Exceeds Threshold
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Style
ECCN
Transistor Polarity
Continuous Collector Current
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Technology
DC Current Gain hFE Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS

2N2907AUB1 Documents

Download datasheets and manufacturer documentation for 2N2907AUB1

Ersa Engineering Model quality level (PDF)      
Ersa SPICE Model (Zip)      

Shopping Guide

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