STMicroelectronics

2N3055

2N3055 Description

The 2N3055 from STMicroelectronics is a robust NPN bipolar junction transistor (BJT) designed for high-power applications. Housed in a TO-3 metal package, it offers a 60V collector-emitter breakdown voltage (V_CEO) and a maximum collector current (I_C) of 15A, making it suitable for demanding circuits. With a power dissipation capability of 115W and an operating junction temperature (T_J) of up to 200°C, this transistor excels in high-temperature environments. Its low collector cutoff current (700µA) and DC current gain (h_FE) of 20 @ 4A, 4V ensure efficient switching and amplification. Although marked as obsolete, it remains widely used due to its reliability and rugged construction.

2N3055 Features

• High Power Handling: 115W max dissipation for heavy-duty applications.
• High Current Capacity: 15A continuous collector current.
• Wide Voltage Range: 60V V_CEO for medium-voltage circuits.
• Thermal Resilience: Operates up to 200°C, ideal for harsh conditions.
• Low Leakage: 700µA max cutoff current enhances efficiency.
• RoHS3 Compliant: Meets modern environmental standards.
• Chassis Mount (TO-3): Robust mechanical and thermal performance.

2N3055 Applications

The 2N3055 is a versatile component in:

• Power Supplies: Linear regulators and high-current rectifiers.
• Audio Amplifiers: Output stages in Class AB/B designs.
• Motor Control: Driver circuits for DC motors and solenoids.
• Inverters and Converters: High-power switching applications.
• Industrial Equipment: Relays, heaters, and automation systems.
  Its high current gain and saturation voltage (3V @ 10A) make it particularly effective in linear and switching power stages, where durability and thermal stability are critical.

Conclusion of 2N3055

Despite its obsolete status, the 2N3055 remains a cornerstone in power electronics due to its proven reliability, high power tolerance, and broad compatibility. Its TO-3 package ensures excellent heat dissipation, while its electrical characteristics make it a preferred choice for amplification, switching, and control applications. Engineers continue to rely on this transistor for rugged, high-performance designs, especially where cost-effectiveness and longevity are priorities.