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STMicroelectronics
2SD1047
276-2SD1047
PDF Datasheet
NPN BJT Transistor, 140V VCEO, 12A IC, 100W PD, 20MHz
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Tech Specifications
Collector- Base Voltage VCBO
200V
Collector Emitter Breakdown Voltage
140V
Collector - Emitter Voltage VCEO
140V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter- Base Voltage VEBO
6V
Frequency
20MHz
Gain Bandwidth Product
20MHz
2SD1047 Description
Bipolar (BJT) Transistor NPN 140 V 12 A 20MHz 100 W Through Hole TO-3P
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