STMicroelectronics

2STF1360

The 2STF1360 is a high-power transistor manufactured by STMicroelectronics. It is a NPN bipolar junction transistor (BJT) that is designed for use in high-power applications, such as power amplifiers and power switching circuits.

Description:

The 2STF1360 is a high-power NPN transistor that is designed for use in high-power applications. It has a plastic package and is available in a TO-220AB package. The transistor has a maximum collector current (Ic) of 15A and a maximum collector-emitter voltage (Vce) of 100V. It also has a high current gain (hfe) and low saturation voltage (Vce(sat)).

Features:

• High-power NPN transistor
• Maximum collector current (Ic) of 15A
• Maximum collector-emitter voltage (Vce) of 100V
• High current gain (hfe)
• Low saturation voltage (Vce(sat))
• Plastic package
• TO-220AB package

Applications:

The 2STF1360 transistor is suitable for use in a variety of high-power applications, including:

• Power amplifiers
• Power switching circuits
• Motor control circuits
• High-power audio amplifiers
• High-power switching regulators
• High-power RF power amplifiers

It is important to note that the transistor should be used in accordance with the datasheet specifications and proper thermal management should be considered when using the transistor in high-power applications.