STMicroelectronics_2STR1160

STMicroelectronics
2STR1160  
Single Bipolar Transistors

STMicroelectronics
2STR1160
276-2STR1160
Ersa
STMicroelectronics-2STR1160-datasheets-7027585.pdf
TRANS NPN 60V 1A SOT23-3
In Stock : 12311

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2STR1160 Description

2STR1160 Description

The 2STR1160, manufactured by STMicroelectronics, is a single NPN Bipolar Transistor designed for high-performance applications. With an operating temperature range of 150°C (TJ), it offers robust performance in various electronic devices. This SOT23-3 packaged transistor boasts a maximum collector current (Ic) of 1 A and a Vce saturation of 430mV @ 100mA, 1A. The 2STR1160 is designed to handle a maximum power of 500 mW, making it suitable for demanding applications.

2STR1160 Features

  • Operating Temperature: 150°C (TJ) for reliable performance in high-temperature environments.
  • Current - Collector (Ic) (Max): 1 A, ensuring efficient current handling capabilities.
  • Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 1A, providing low saturation voltage for improved efficiency.
  • Transistor Type: NPN, offering excellent switching characteristics and high gain.
  • Power - Max: 500 mW, suitable for applications requiring high power dissipation.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V, ensuring consistent performance across a wide range of operating conditions.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating a high level of resistance to moisture-induced degradation.

2STR1160 Applications

The 2STR1160 is ideal for various applications where high performance and reliability are critical. Some specific use cases include:

  1. Automotive Electronics: Due to its high operating temperature and robustness, the 2STR1160 is well-suited for automotive applications such as engine control modules and power management systems.
  2. Industrial Control Systems: Its ability to handle high power and current makes it an excellent choice for industrial control systems, where reliability and performance are paramount.
  3. Power Amplifiers: The 2STR1160's high current and power handling capabilities make it suitable for use in power amplifiers, ensuring efficient signal amplification and minimal distortion.

Conclusion of 2STR1160

The 2STR1160, from STMicroelectronics, is a high-performance NPN Bipolar Transistor designed for demanding applications. Its unique features, such as a wide operating temperature range, high current and power handling capabilities, and low saturation voltage, make it an excellent choice for automotive electronics, industrial control systems, and power amplifiers. Despite being classified as obsolete, the 2STR1160 remains a reliable and efficient solution for applications requiring high performance and reliability.

Tech Specifications

Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
ECCN
Mounting Type
Product Status
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Series
Transistor Type
Package / Case
Power - Max
REACH Status
Mfr
Current - Collector Cutoff (Max)
HTSUS
Package
RoHS Status
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Moisture Sensitivity Level (MSL)
Unit Weight
Configuration
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
DC Current Gain hFE Max
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

2STR1160 Documents

Download datasheets and manufacturer documentation for 2STR1160

Ersa 2STR1160      
Ersa Box Label Chg 28/Jul/2016      
Ersa IPD/15/9345 04/Aug/2015      

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