STMicroelectronics_B11NM60N
original

STMicroelectronics
B11NM60N

285-B11NM60N
MOSFET N-CH 600V 10A I2PAK

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Tech Specifications

Status
Obsolete(EOL)
Max Gate Charge
31nC @ 10V
Continuous Drain Current at 25°C
10A (Tc)
Dimension
TO-262-3 Long Leads, I2Pak, TO-262AA
Max Input Capacitance
850pF @ 50V
Gate-Source Threshold Voltage
4V @ 250μA
Mounting
Through Hole
Power Dissipation (Max)
90W (Tc)
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B11NM60N Description

Tube/Rail provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The RF FETs, MOSFETs that the B11NM60N belongs to can be classified under the Discrete Semiconductors. B11NM60N is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. B11NM60N provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is the mounting type of B11NM60N?
B11NM60N uses a Through Hole mounting style based on the listed product specifications.
What package or case is B11NM60N available in?
Are there related or alternative parts for B11NM60N?
Is B11NM60N currently in stock?
What voltage specification is listed for B11NM60N?
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