STMicroelectronics_BD438

STMicroelectronics
BD438  
Single Bipolar Transistors

STMicroelectronics
BD438
276-BD438
Ersa
STMicroelectronics-BD438-datasheets-6582232.pdf
TRANS PNP 45V 4A SOT32-3
In Stock : 3477

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BD438 Description

BD438 Description

The BD438 is a high-performance PNP bipolar transistor designed and manufactured by STMicroelectronics. It is engineered to deliver exceptional performance in a wide range of applications, thanks to its robust technical specifications and reliable operation. With an operating temperature of 150°C (TJ) and a maximum collector-emitter breakdown voltage of 45V, the BD438 is capable of handling high power and voltage demands. Its maximum current collector (Ic) is rated at 4A, making it suitable for applications requiring substantial current flow. The BD438 also boasts a low Vce saturation of 600mV @ 200mA, 2A, which contributes to its high efficiency and power handling capabilities.

BD438 Features

  • PNP Transistor Type: The BD438 is a PNP bipolar transistor, which is ideal for applications requiring high current and voltage gain.
  • High Operating Temperature: With an operating temperature of 150°C (TJ), the BD438 can perform reliably in high-temperature environments.
  • High Voltage and Current Ratings: The BD438 can handle a maximum collector-emitter breakdown voltage of 45V and a maximum current collector (Ic) of 4A.
  • Low Vce Saturation: The BD438 has a low Vce saturation of 600mV @ 200mA, 2A, which contributes to its high efficiency and power handling capabilities.
  • High DC Current Gain: The BD438 has a minimum DC current gain (hFE) of 30 @ 10mA, 5V, ensuring high current amplification and signal integrity.
  • Through Hole Mounting: The BD438 is available in a through-hole package, making it suitable for applications requiring easy installation and replacement.
  • RoHS Compliance: The BD438 is compliant with RoHS3 standards, ensuring environmental friendliness and adherence to global regulations.

BD438 Applications

The BD438's high performance and robust specifications make it ideal for a wide range of applications, including:

  1. Power Amplifiers: The BD438's high current and voltage ratings make it suitable for use in power amplifiers, where high power and voltage gain are required.
  2. Switching Applications: The BD438's low Vce saturation and high current gain make it an excellent choice for switching applications, where low power dissipation and high efficiency are crucial.
  3. Automotive Electronics: The BD438's high operating temperature and robust performance make it suitable for use in automotive electronics, where reliability and durability are essential.
  4. Industrial Control Systems: The BD438's high power handling capabilities and wide operating temperature range make it ideal for use in industrial control systems, where high current and voltage demands are common.

Conclusion of BD438

In conclusion, the BD438 is a high-performance PNP bipolar transistor that offers exceptional performance, reliability, and versatility. Its high current and voltage ratings, low Vce saturation, and high DC current gain make it an ideal choice for a wide range of applications, including power amplifiers, switching applications, automotive electronics, and industrial control systems. With its robust technical specifications and compliance with RoHS3 standards, the BD438 is a reliable and environmentally friendly solution for high-performance electronic devices.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
SVHC Exceeds Threshold
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
DC Current Gain hFE Max
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

BD438 Documents

Download datasheets and manufacturer documentation for BD438

Ersa BD433-38      
Ersa BD438 View All Specifications      
Ersa BD433-38      

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