STMicroelectronics_BD442
original

STMicroelectronics
BD442

276-BD442
PDF Datasheet
4A 80V PNP Si Power BJT, TO-126

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Tech Specifications

Package / Case
SOT-32
Collector- Base Voltage VCBO
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
800mV
Collector - Emitter Voltage VCEO
80V
Collector-emitter Voltage-Max
800mV
Contact Plating
Tin, Matte
Emitter- Base Voltage VEBO
5V
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BD442 Description

Bipolar (BJT) Transistor PNP 80 V 4 A 36 W Through Hole SOT-32

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