The BD677A from STMicroelectronics is a high-performance NPN Darlington transistor designed for robust switching and amplification applications. With a collector-emitter voltage (Vce) rating of 60V and a maximum collector current (Ic) of 4A, this device is engineered to handle demanding power requirements. Its Darlington configuration ensures high current gain (hFE ≥ 750 @ 2A, 3V), making it ideal for low-drive, high-output scenarios. The transistor operates reliably at junction temperatures up to 150°C and features a low collector cutoff current (500µA max), enhancing efficiency in precision circuits. Packaged in a SOT32-3 through-hole format, it is suited for industrial and automotive environments where durability is critical.
The BD677A excels in high-gain, medium-power circuits, including:
The BD677A stands out as a high-reliability Darlington transistor for applications requiring high current gain and robust power handling. Its low saturation voltage, wide temperature tolerance, and compliance with environmental standards make it a superior choice over generic NPN transistors. Ideal for automotive, industrial, and consumer electronics, this device combines performance with durability, ensuring long-term operational stability. Engineers seeking a cost-effective, high-efficiency solution for medium-power switching or amplification will find the BD677A exceptionally well-suited.
Download datasheets and manufacturer documentation for BD677A