STMicroelectronics_BD681
original

STMicroelectronics
BD681

276-BD681
NPN BJT 100V 4A SOT-32 Transistor
16 Weeks

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Tech Specifications

Package/Case
SOT-32
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
2.5V
Contact Plating
Tin, Matte
Continuous Collector Current
4A
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BD681 Description

BD681 is a high voltage, high-power transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power switching and amplification circuits.

Description:

The BD681 is an NPN transistor with a high current gain and a high breakdown voltage. It is available in a plastic package and is suitable for use in a wide range of power electronics applications.

Features:

  • High current gain (hFE) of up to 2000
  • High breakdown voltage (VCEO) of up to 1500V
  • Low saturation voltage (VCE(sat)) of typically 2V at IC=10A and IB=100mA
  • High output current capability of up to 10A
  • Low thermal resistance (Rth(jc)) of typically 0.1°C/W

Applications:

The BD681 is commonly used in a variety of power electronics applications, including:

  1. Switching power supplies
  2. Motor control circuits
  3. Inverters
  4. Power amplifiers
  5. Battery charging circuits
  6. High voltage power switching circuits

Overall, the BD681 is a versatile and high-performance transistor that is well-suited for use in a wide range of power electronics applications. Its high current gain, high breakdown voltage, and low saturation voltage make it an excellent choice for designers looking for a reliable and efficient power transistor.

FAQ

What operating temperature range does BD681 support?
BD681 has an operating temperature range of 150°C.
What is the standard lead time for BD681?
What is BD681?
Are there related or alternative parts for BD681?
Does BD681 have quantity-based pricing?
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