STMicroelectronics

BD681  

Single Bipolar Transistors

BD681 is a high voltage, high-power transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power switching and amplification circuits.

Description:

The BD681 is an NPN transistor with a high current gain and a high breakdown voltage. It is available in a plastic package and is suitable for use in a wide range of power electronics applications.

Features:

• High current gain (hFE) of up to 2000
• High breakdown voltage (VCEO) of up to 1500V
• Low saturation voltage (VCE(sat)) of typically 2V at IC=10A and IB=100mA
• High output current capability of up to 10A
• Low thermal resistance (Rth(jc)) of typically 0.1°C/W

Applications:

The BD681 is commonly used in a variety of power electronics applications, including:

1. Switching power supplies
2. Motor control circuits
3. Inverters
4. Power amplifiers
5. Battery charging circuits
6. High voltage power switching circuits

Overall, the BD681 is a versatile and high-performance transistor that is well-suited for use in a wide range of power electronics applications. Its high current gain, high breakdown voltage, and low saturation voltage make it an excellent choice for designers looking for a reliable and efficient power transistor.

BD681 Documents

Download datasheets and manufacturer documentation for BD681

Datasheets :

BD6yyy      

Other Related Documents :

BD681 View All Specifications      

HTML Datasheet :

BD6yyy