STMicroelectronics_ESM2012DV
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STMicroelectronics
ESM2012DV

276-ESM2012DV
120A 150V NPN BJT Power Transistor Module

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Tech Specifications

Package/Case
Module
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
1.5V
Current Rating
120A
Emitter Base Voltage (VEBO)
7V
hFE Min
1200
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ESM2012DV Description

Bipolar (BJT) Transistor NPN - Darlington 120 V 120 A 175 W Chassis Mount ISOTOP®

FAQ

What voltage specification is listed for ESM2012DV?
The listed voltage-related specification for ESM2012DV is 120V.
What operating temperature range does ESM2012DV support?
Is ESM2012DV currently in stock?
What is the mounting type of ESM2012DV?
What is ESM2012DV?
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