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STMicroelectronics
MJD122-1
276-MJD122-1
PDF Datasheet
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
16 Weeks
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Tech Specifications
Package / Case
TO-251-3
Collector- Base Voltage VCBO
100V
Collector Emitter Breakdown Voltage
100V
Collector-emitter Voltage-Max
4V
Emitter- Base Voltage VEBO
5V
hFE Min
100
Lead Free
Lead Free
Max Breakdown Voltage
100V
MJD122-1 Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20 W Through Hole TO-251 (IPAK)
FAQ
What voltage specification is listed for MJD122-1?
The listed voltage-related specification for MJD122-1 is 100V.
What is the mounting type of MJD122-1?
Are there related or alternative parts for MJD122-1?
What package or case is MJD122-1 available in?
What is the standard lead time for MJD122-1?
Availability
(In Stock :
11 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.01030 | $1.01 |
| 10+ | $0.99550 | $9.96 |
| 30+ | $0.98730 | $29.62 |
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Unit Price $1.01030
Subtotal $1.01
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