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STMicroelectronics
MJD122-1
276-MJD122-1
PDF Datasheet
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
16 Weeks
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Tech Specifications
Package/Case
TO-251-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector-emitter Voltage-Max
4V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Lead Free
Lead Free
Max Breakdown Voltage
100V
MJD122-1 Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20 W Through Hole TO-251 (IPAK)
FAQ
What voltage specification is listed for MJD122-1?
The listed voltage-related specification for MJD122-1 is 100V.
Is MJD122-1 currently in stock?
What is the standard lead time for MJD122-1?
Are there related or alternative parts for MJD122-1?
Does MJD122-1 have quantity-based pricing?
Availability
(In Stock :
34 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.57772 | $0.58 |
| 10+ | $0.56228 | $5.62 |
| 30+ | $0.55200 | $16.56 |
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