STMicroelectronics_MJD3055T4
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STMicroelectronics
MJD3055T4

276-MJD3055T4
NPN BJT Transistor, 60V, 10A, 2MHz, TO-252, Surface Mount
16 Weeks

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Tech Specifications

Package / Case
TO-252
Collector- Base Voltage VCBO
70V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.1V
Collector - Emitter Voltage VCEO
60V
Collector-emitter Voltage-Max
8V
Current Rating
10A
Emitter- Base Voltage VEBO
5V
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MJD3055T4 Description

MJD3055T4 Description

The MJD3055T4 is a high-performance NPN transistor designed and manufactured by STMicroelectronics. With its robust technical specifications, this device offers exceptional performance benefits and versatility in various applications. The MJD3055T4 is an active product, ensuring ongoing availability and support from the manufacturer. It is RoHS3 compliant, making it suitable for environmentally conscious designs.

MJD3055T4 Features

  • Operating Temperature: The MJD3055T4 can operate within a wide temperature range of 150°C (TJ), ensuring reliable performance in various environmental conditions.
  • Frequency - Transition: With a transition frequency of 2MHz, the MJD3055T4 is well-suited for high-speed switching applications.
  • Current - Collector (Ic) (Max): The device can handle a maximum collector current of 10 A, making it ideal for high-power applications.
  • Vce Saturation (Max) @ Ib, Ic: The MJD3055T4 offers low saturation voltage, with a maximum of 8V @ 3.3A, 10A, which contributes to high efficiency in power management systems.
  • Voltage - Collector Emitter Breakdown (Max): The device can withstand a maximum collector-emitter breakdown voltage of 60V, providing robustness in high-voltage applications.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: The MJD3055T4 boasts a minimum current gain of 20 @ 4A, 4V, ensuring consistent performance across different operating conditions.
  • Mounting Type: The surface mount design of the MJD3055T4 facilitates easy integration into compact and densely populated circuit boards.
  • Supplier Device Package: The DPAK package offers excellent thermal performance and mechanical stability, making it suitable for power applications.

MJD3055T4 Applications

The MJD3055T4's unique combination of high current handling, low saturation voltage, and high breakdown voltage makes it an ideal choice for a variety of applications:

  • Power Amplifiers: The MJD3055T4's high current and power ratings make it suitable for use in power amplifiers, where high efficiency and reliability are critical.
  • Motor Control: The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications, where precise control and high power are required.
  • Switching Regulators: The MJD3055T4's low saturation voltage and high transition frequency make it well-suited for use in switching regulators, where high efficiency and fast response times are essential.

Conclusion of MJD3055T4

In conclusion, the MJD3055T4 is a versatile and high-performance NPN transistor that offers a unique combination of features and benefits. Its high current and power ratings, low saturation voltage, and high breakdown voltage make it an ideal choice for a wide range of applications, including power amplifiers, motor control, and switching regulators. With its ongoing availability and RoHS3 compliance, the MJD3055T4 is a reliable and environmentally conscious choice for your next design.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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