STMicroelectronics_MJD31CT4-A

STMicroelectronics
MJD31CT4-A  
Single Bipolar Transistors

STMicroelectronics
MJD31CT4-A
276-MJD31CT4-A
Ersa
STMicroelectronics-MJD31CT4-A-datasheets-144904.pdf
TRANS NPN 100V 3A DPAK
In Stock : 3103

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MJD31CT4-A Description

MJD31CT4-A Description

The MJD31CT4-A is a high-performance NPN Bipolar Transistor designed and manufactured by STMicroelectronics. This device is known for its robustness and reliability, making it an ideal choice for various electronic applications. With an operating temperature of 150°C (TJ), it can withstand high-temperature environments, ensuring consistent performance in demanding conditions. The MJD31CT4-A boasts a maximum collector current (Ic) of 3A, providing ample power for various applications. Furthermore, its Vce saturation (Max) @ Ib, Ic is 1.2V @ 375mA, 3A, ensuring efficient power management.

MJD31CT4-A Features

  • Operating Temperature: 150°C (TJ) for reliable performance in high-temperature environments.
  • Maximum Collector Current (Ic): 3A, providing ample power for various applications.
  • Vce Saturation (Max): 1.2V @ 375mA, 3A for efficient power management.
  • Mounting Type: Surface Mount for easy integration into electronic devices.
  • Voltage - Collector Emitter Breakdown (Max): 100V for reliable operation under high voltage conditions.
  • Supplier Device Package: DPAK for compact and efficient packaging.
  • Transistor Type: NPN for versatility in various electronic circuits.
  • Power - Max: 15W for high-power applications.
  • DC Current Gain (hFE) (Min): 10 @ 3A, 4V for consistent performance.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) for resistance to moisture and humidity.

MJD31CT4-A Applications

The MJD31CT4-A is ideal for a wide range of applications due to its high power handling, robustness, and reliability. Some specific use cases include:

  1. Power Amplifiers: The high power rating and robustness make it suitable for power amplifiers in audio and communication systems.
  2. Motor Control: Its high current handling capability makes it ideal for motor control applications in industrial and automotive systems.
  3. Switching Applications: The MJD31CT4-A can be used in switching applications where high current and voltage ratings are required.
  4. Automotive Electronics: Its high-temperature tolerance and reliability make it suitable for automotive electronics, such as power windows and seat controls.

Conclusion of MJD31CT4-A

The MJD31CT4-A is a versatile and high-performance NPN Bipolar Transistor from STMicroelectronics. Its unique combination of high power handling, robustness, and reliability makes it an ideal choice for various applications, including power amplifiers, motor control, switching applications, and automotive electronics. With its advanced technical specifications and performance benefits, the MJD31CT4-A offers a competitive advantage over similar models in the market.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
SVHC Exceeds Threshold
Vce Saturation (Max) @ Ib, Ic
Package Length
Series
Type
Minimum DC Current Gain
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Qualification
Maximum DC Collector Current
Length
Technology
Gain Bandwidth Product fT
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Width

MJD31CT4-A Documents

Download datasheets and manufacturer documentation for MJD31CT4-A

Ersa Mult Devices Testing 10/May/2018      
Ersa MJD31CT4-A      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa MJD31CT4-A View All Specifications      
Ersa MJD31CT4-A      

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