STMicroelectronics_MJD32CT4

STMicroelectronics
MJD32CT4  
Single Bipolar Transistors

STMicroelectronics
MJD32CT4
276-MJD32CT4
Ersa
STMicroelectronics-MJD32CT4-datasheets-11197333.pdf
TRANS PNP 100V 3A DPAK
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    MJD32CT4 Description

    MJD32CT4 Description

    The MJD32CT4 is a high-performance PNP single bipolar transistor designed and manufactured by STMicroelectronics. This device is known for its exceptional electrical characteristics and robust construction, making it an ideal choice for various applications in the electronics industry. With an operating temperature range of 150°C (TJ), the MJD32CT4 can handle a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage of 100 V. The device is designed for surface mount applications and is available in a DPAK package, making it suitable for a wide range of electronic devices.

    MJD32CT4 Features

    • PNP Transistor Type: The MJD32CT4 is a PNP transistor, which is commonly used in amplifying or switching applications.
    • High Operating Temperature: With an operating temperature of 150°C (TJ), the MJD32CT4 can be used in high-temperature environments.
    • High Current Capability: The device can handle a maximum collector current of 3 A, making it suitable for high-current applications.
    • Low Vce Saturation: The MJD32CT4 has a low Vce saturation voltage of 1.2V @ 375mA, 3A, which helps reduce power dissipation and improve efficiency.
    • High Power Rating: The device can handle a maximum power dissipation of 15 W, making it suitable for high-power applications.
    • RoHS Compliance: The MJD32CT4 is compliant with the RoHS3 directive, making it an environmentally friendly choice.
    • REACH Unaffected: The device is not affected by the REACH regulation, ensuring compliance with European chemical regulations.

    MJD32CT4 Applications

    The MJD32CT4 is an ideal choice for various applications in the electronics industry, including:

    1. Amplifiers: Due to its high current and power ratings, the MJD32CT4 is well-suited for use in audio and power amplifiers.
    2. Switching Applications: The device's low Vce saturation voltage makes it an excellent choice for switching applications, such as motor control and power management systems.
    3. High-Temperature Environments: The MJD32CT4's high operating temperature range makes it suitable for use in automotive and industrial applications where high temperatures are common.
    4. Surface Mount Applications: The device's DPAK package and surface mount design make it ideal for use in compact electronic devices and printed circuit boards (PCBs).

    Conclusion of MJD32CT4

    The MJD32CT4 is a versatile and high-performance PNP single bipolar transistor that offers excellent electrical characteristics and robust construction. Its high operating temperature, high current and power ratings, and low Vce saturation voltage make it an ideal choice for a wide range of applications in the electronics industry. With its RoHS compliance and REACH unaffected status, the MJD32CT4 is also an environmentally friendly option for your electronic devices.

    Tech Specifications

    Configuration
    PPAP
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Supplier Temperature Grade
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    SVHC
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    SVHC Exceeds Threshold
    Vce Saturation (Max) @ Ib, Ic
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Tab
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    MJD32CT4 Documents

    Download datasheets and manufacturer documentation for MJD32CT4

    Ersa MJD32C      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa MJD32C View All Specifications      

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