German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
MJD50T4
276-MJD50T4
PDF Datasheet
1A, 400V, NPN, Si, POWER TRANSISTOR, TO-252AA, TO-252, DPAK-3
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-252-3
Collector Base Voltage (VCBO)
500V
Collector Emitter Breakdown Voltage
400V
Collector-emitter Voltage-Max
1V
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
10MHz
hFE Min
30
MJD50T4 Description
Bipolar (BJT) Transistor NPN 400 V 1 A 10MHz 15 W Surface Mount DPAK
FAQ
What voltage specification is listed for MJD50T4?
The listed voltage-related specification for MJD50T4 is 500V.
What operating temperature range does MJD50T4 support?
What package or case is MJD50T4 available in?
Are there related or alternative parts for MJD50T4?
What is MJD50T4?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
