STMicroelectronics_NAND01GW3B2AN6F
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STMicroelectronics
NAND01GW3B2AN6F

774-NAND01GW3B2AN6F
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IC FLASH 1G PARALLEL 48TSOP

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Tech Specifications

Access Time
30ns
Package/Case
TSOP
Data Bus Width
8b
Interface
Parallel
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Supply Voltage
3.6V
Memory Size
1Gb
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NAND01GW3B2AN6F Description

NAND01GW3B2AN6F Description

The NAND01GW3B2AN6F is a high-performance flash memory IC chip manufactured by STMicroelectronics, designed for applications requiring robust and reliable data storage solutions. This 1Gbit flash memory device features a parallel memory interface and is organized as 128M x 8, offering efficient data access and storage capabilities. The NAND01GW3B2AN6F is housed in a 48TSOP package and is suitable for surface-mount applications, ensuring compatibility with modern PCB designs. With an access time of 30 ns and a write cycle time of 30 ns for both word and page operations, this memory chip delivers rapid data read and write speeds, making it ideal for time-sensitive applications. The device operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements. The NAND01GW3B2AN6F is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards. It is also classified under ECCN 3A991B1A and HTSUS 8542.32.0071, ensuring compliance with international trade regulations. Packaged in tape and reel format, this memory IC chip is ready for automated assembly processes. Despite its obsolete status, the NAND01GW3B2AN6F remains a reliable choice for legacy systems and applications where its specific features are required.

NAND01GW3B2AN6F Features

  • Memory Size and Organization: The NAND01GW3B2AN6F offers a memory size of 1Gbit, organized as 128M x 8, providing ample storage capacity for various applications.
  • Parallel Interface: The parallel memory interface ensures efficient data transfer and compatibility with systems requiring high-speed data access.
  • Fast Access and Write Times: With an access time of 30 ns and a write cycle time of 30 ns for both word and page operations, this memory chip delivers rapid performance, making it suitable for applications requiring quick data read and write operations.
  • Flexible Voltage Range: The device operates within a voltage range of 2.7V to 3.6V, offering flexibility in power supply requirements and compatibility with a variety of systems.
  • Surface-Mount Compatibility: The NAND01GW3B2AN6F is designed for surface-mount applications, ensuring compatibility with modern PCB designs and automated assembly processes.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards, making it suitable for use in environmentally conscious applications.
  • Packaging: Packaged in tape and reel format, the NAND01GW3B2AN6F is ready for automated assembly processes, ensuring ease of integration into manufacturing workflows.
  • Trade Compliance: Classified under ECCN 3A991B1A and HTSUS 8542.32.0071, this memory IC chip complies with international trade regulations, ensuring smooth procurement and deployment.

NAND01GW3B2AN6F Applications

The NAND01GW3B2AN6F is ideal for a variety of applications where reliable and efficient data storage is required. Some specific use cases include:

  • Embedded Systems: The device's fast access and write times make it suitable for embedded systems requiring quick data read and write operations, such as industrial control systems and automotive electronics.
  • Consumer Electronics: The NAND01GW3B2AN6F can be used in consumer electronics devices, such as digital cameras and media players, where high-speed data storage and retrieval are essential for optimal performance.
  • Telecommunications: In telecommunications infrastructure, the memory chip can be used for storing firmware and configuration data, ensuring reliable operation and quick access to critical information.
  • Legacy Systems: Despite its obsolete status, the NAND01GW3B2AN6F remains a reliable choice for legacy systems where its specific features and compatibility are required, ensuring continued operation and data integrity.

Conclusion of NAND01GW3B2AN6F

The NAND01GW3B2AN6F is a high-performance flash memory IC chip that offers a combination of robust features and reliable performance. Its 1Gbit memory size, organized as 128M x 8, and parallel memory interface ensure efficient data storage and transfer. The device's fast access and write times, flexible voltage range, and surface-mount compatibility make it suitable for a variety of applications, including embedded systems, consumer electronics, and telecommunications infrastructure. The NAND01GW3B2AN6F's environmental compliance and trade regulation adherence further enhance its suitability for modern electronics applications. Despite its obsolete status, this memory chip remains a reliable choice for legacy systems and applications where its specific features are required, ensuring continued operation and data integrity.

FAQ

What package or case is NAND01GW3B2AN6F available in?
NAND01GW3B2AN6F is available in the TSOP package / case.
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