STMicroelectronics

NAND256W3A0AN6

NAND256W3A0AN6 Description

The NAND256W3A0AN6 is a 256 Mbit Flash memory IC designed by STMicroelectronics, featuring a parallel memory interface. This device is organized as 32M x 8, providing a robust solution for applications requiring high-density non-volatile storage. The NAND256W3A0AN6 operates within a supply voltage range of 2.7V to 3.6V and offers an access time of 50 ns, ensuring rapid data retrieval. The write cycle time for both word and page operations is also 50 ns, making it highly efficient for write-intensive applications.

NAND256W3A0AN6 Features

• Memory Size: 256 Mbit, providing ample storage capacity for various applications.
• Memory Organization: 32M x 8, offering a balanced approach to data storage and retrieval.
• Access Time: 50 ns, ensuring quick data access and high performance.
• Write Cycle Time: 50 ns for both word and page operations, optimizing write performance.
• Voltage Range: 2.7V to 3.6V, providing flexibility in power supply requirements.
• Memory Interface: Parallel, allowing for straightforward integration with existing systems.
• Mounting Type: Surface Mount, suitable for compact and space-efficient designs.
• Package: Tray, facilitating easy handling and storage.
• Moisture Sensitivity Level (MSL): Level 3 (168 hours), ensuring reliability in various environmental conditions.
• Compliance: REACH Unaffected and ROHS3 Compliant, adhering to stringent environmental and safety standards.

NAND256W3A0AN6 Applications

The NAND256W3A0AN6 is ideal for applications requiring high-density, non-volatile storage with fast read and write capabilities. Its parallel memory interface and 50 ns access time make it suitable for embedded systems, industrial control units, and consumer electronics where rapid data access is crucial. The 256 Mbit capacity and 32M x 8 organization provide a versatile solution for various storage needs.

Conclusion of NAND256W3A0AN6

The NAND256W3A0AN6 from STMicroelectronics is a high-performance Flash memory IC that offers a balance of storage capacity, speed, and reliability. Its 256 Mbit capacity, 50 ns access time, and 50 ns write cycle time make it an excellent choice for applications requiring fast data access and efficient write operations. The device's compliance with REACH and ROHS3 standards ensures it meets environmental and safety requirements, making it a reliable choice for modern electronics. Despite being marked as obsolete, the NAND256W3A0AN6 remains a robust solution for applications needing a compact, high-density storage solution with a parallel memory interface.