STMicroelectronics

NAND512R3A2BZA6E

NAND512R3A2BZA6E Description

The NAND512R3A2BZA6E is a 512 Mbit NAND Flash memory IC designed by STMicroelectronics. This memory chip features a parallel memory interface and is organized in a 64M x 8 configuration. It operates within a supply voltage range of 1.7V to 1.95V and has an access time of 60 nanoseconds. The write cycle time for both word and page operations is also 60 nanoseconds. This IC is packaged in a 63-ball FBGA (Fine Ball Grid Array) and is designed for surface mount applications. The NAND512R3A2BZA6E is classified under ECCN 3A991B1A and HTSUS 8542.32.0071. It has a moisture sensitivity level (MSL) of 3, which allows for 168 hours of exposure before assembly. This product is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards. However, it is important to note that this product is now obsolete.

NAND512R3A2BZA6E Features

• Memory Size and Organization: The NAND512R3A2BZA6E offers a substantial 512 Mbit memory size, organized in a 64M x 8 configuration, making it suitable for applications requiring large data storage.
• Fast Access and Write Times: With an access time of 60 nanoseconds and a write cycle time of 60 nanoseconds for both word and page operations, this IC ensures efficient data read and write operations.
• Voltage Range: The supply voltage range of 1.7V to 1.95V provides flexibility and compatibility with various power supply systems.
• Surface Mount Technology: The surface mount mounting type and 63-ball FBGA package make it ideal for compact and high-density PCB designs.
• Environmental Compliance: The IC is REACH unaffected and ROHS3 compliant, ensuring it meets stringent environmental and safety standards.
• Moisture Sensitivity Level: An MSL of 3 (168 hours) allows for extended exposure before assembly, providing flexibility in manufacturing processes.

NAND512R3A2BZA6E Applications

The NAND512R3A2BZA6E is well-suited for a variety of applications that require high-density, non-volatile memory storage. Some specific use cases include:

• Embedded Systems: Ideal for embedded systems where large amounts of data need to be stored and accessed quickly.
• Consumer Electronics: Suitable for consumer electronics such as digital cameras, media players, and smart devices that require reliable and fast memory solutions.
• Industrial Applications: Can be used in industrial applications where robust and high-capacity memory is necessary for data logging and control systems.
• Telecommunications: Useful in telecommunications equipment for storing firmware and configuration data.

Conclusion of NAND512R3A2BZA6E

The NAND512R3A2BZA6E is a high-performance NAND Flash memory IC that offers significant advantages in terms of memory size, access speed, and environmental compliance. Its 512 Mbit capacity and 60 nanosecond access/write times make it an excellent choice for applications requiring large data storage and fast data retrieval. The surface mount technology and compact 63-ball FBGA package ensure it fits seamlessly into modern, high-density PCB designs. While the product is now obsolete, its features and performance benefits make it a reliable option for legacy systems and applications where its unique advantages are still relevant.