STMicroelectronics

NAND512W3A2BN6E

NAND512W3A2BN6E Description

The NAND512W3A2BN6E is a high-performance flash memory IC designed by STMicroelectronics, featuring a 512 Mbit memory size with a parallel memory interface. This device is organized as 64M x 8, providing efficient data storage and retrieval capabilities. It operates within a supply voltage range of 2.7V to 3.6V and offers an access time of 50 ns, ensuring rapid data access and processing. The write cycle time for both word and page operations is also 50 ns, contributing to its high-speed performance.

This IC is packaged in a 48TSOP format and is designed for surface mount applications, making it suitable for compact and space-constrained designs. The NAND512W3A2BN6E is classified under HTSUS code 8542.32.0071 and is compliant with REACH and RoHS3 standards, ensuring environmental sustainability and regulatory compliance. The product is shipped in trays and has a moisture sensitivity level (MSL) of 3, allowing for 168 hours of exposure before assembly.

NAND512W3A2BN6E Features

• Memory Size: 512 Mbit, providing ample storage for various applications.
• Memory Organization: 64M x 8, offering a balanced trade-off between memory depth and width.
• Memory Interface: Parallel interface for straightforward integration with existing systems.
• Access Time: 50 ns, ensuring quick data retrieval and high-speed performance.
• Write Cycle Time: 50 ns for both word and page operations, facilitating efficient data writing.
• Supply Voltage: 2.7V to 3.6V, providing flexibility in power supply design.
• Mounting Type: Surface mount, ideal for compact and modern PCB designs.
• Package: 48TSOP, offering robustness and reliability in various operating conditions.
• Regulatory Compliance: REACH unaffected and RoHS3 compliant, ensuring environmental sustainability.
• Moisture Sensitivity Level: MSL 3 (168 hours), suitable for extended handling and storage before assembly.

NAND512W3A2BN6E Applications

The NAND512W3A2BN6E is well-suited for a variety of applications where high-speed data storage and retrieval are critical. Its parallel interface and rapid access times make it ideal for embedded systems, consumer electronics, and industrial control systems. Specific use cases include:

• Embedded Systems: Ideal for microcontroller-based systems requiring non-volatile memory for firmware storage.
• Consumer Electronics: Suitable for devices such as digital cameras, media players, and smart home appliances.
• Industrial Control Systems: Provides reliable memory solutions for programmable logic controllers (PLCs) and industrial automation systems.
• Telecommunications: Useful for storing configuration data and firmware in networking equipment.

Conclusion of NAND512W3A2BN6E

The NAND512W3A2BN6E by STMicroelectronics is a robust and high-performance flash memory IC, offering a 512 Mbit storage capacity with a parallel interface. Its rapid access and write cycle times of 50 ns ensure efficient data handling, making it suitable for a wide range of applications. The device's surface mount package and compliance with environmental regulations further enhance its appeal for modern electronics designs. Despite its obsolete status, the NAND512W3A2BN6E remains a reliable choice for applications requiring high-speed, non-volatile memory solutions.