STMicroelectronics_PD55003S-E
original

STMicroelectronics
PD55003S-E

285-PD55003S-E
3W 40V 500MHz RF LDMOS Transistor, N-CH, PowerSO-10RF
23 Weeks

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Tech Specifications

Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
500MHz
Gain
17dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
1GHz
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PD55003S-E Description

PD55003S-E Description

The PD55003S-E from STMicroelectronics is a high-performance RF LDMOS MOSFET designed for demanding RF power amplification applications. Operating at 500 MHz with a rated voltage of 40 V and a current rating of 2.5 A, this device delivers 3 W of output power with an impressive 17 dB gain. Its 12.5 V test voltage and 50 mA test current ensure robust performance under real-world conditions. Packaged in a PWRSO-10RF tube, the PD55003S-E is RoHS3 compliant, REACH unaffected, and meets EAR99 export control standards, making it suitable for global deployment.

PD55003S-E Features

  • Advanced LDMOS Technology: Ensures high efficiency, linearity, and thermal stability, outperforming traditional MOSFETs in RF applications.
  • High Gain (17 dB): Enhances signal amplification with minimal noise, ideal for sensitive RF systems.
  • Broad Frequency Range (500 MHz): Optimized for mid-band RF applications, including industrial and communication systems.
  • Robust Power Handling (3 W): Supports high-power RF amplification without compromising reliability.
  • Moisture Sensitivity Level (MSL 3): Withstands 168 hours of exposure, ensuring durability in humid environments.
  • Compact PWRSO-10RF Package: Space-efficient and thermally efficient, suitable for high-density PCB designs.

PD55003S-E Applications

The PD55003S-E excels in:

  • RF Power Amplifiers: Base stations, repeaters, and transmitters requiring stable, high-gain amplification.
  • Industrial RF Systems: Plasma generators, medical diathermy, and RF heating equipment.
  • Communication Infrastructure: Two-way radios, amateur radio (HAM), and low-power broadcast systems.
  • Defense & Aerospace: Radar systems and secure communication links where reliability is critical.

Conclusion of PD55003S-E

The PD55003S-E stands out as a versatile, high-performance RF LDMOS MOSFET, combining efficiency, power, and reliability in a compact form factor. Its 17 dB gain, 3 W output, and 500 MHz operation make it a superior choice for RF amplification in industrial, commercial, and defense applications. With STMicroelectronics' proven quality and compliance with global standards, this device is a dependable solution for engineers seeking high-performance RF components.

FAQ

What package or case is PD55003S-E available in?
PD55003S-E is available in the 50 package / case.
What voltage specification is listed for PD55003S-E?
What is the standard lead time for PD55003S-E?
Is PD55003S-E currently in stock?
What is the mounting type of PD55003S-E?
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