STMicroelectronics_PD55008S-E
original

STMicroelectronics
PD55008S-E

285-PD55008S-E
8W 40V 500MHz N-CH LDMOS RF Transistor, PowerSO-10RF
23 Weeks

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Tech Specifications

Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
500MHz
Gain
17dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
1GHz
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PD55008S-E Description

PD55008S-E Description

The PD55008S-E from STMicroelectronics is a high-performance RF LDMOS MOSFET designed for demanding RF power amplification applications. Operating at 500 MHz with a rated voltage of 40 V and a current rating of 4 A, this device delivers 8 W of output power with an impressive 17 dB gain, making it ideal for efficient signal amplification. Tested at 12.5 V and 150 mA, it ensures reliable performance under specified conditions. Packaged in a PWRSO-10RF tube, the PD55008S-E is RoHS3 compliant and adheres to REACH regulations, meeting stringent environmental standards. Its Moisture Sensitivity Level (MSL) 3 rating ensures robustness in handling and storage.

PD55008S-E Features

  • LDMOS Technology: Offers superior linearity, efficiency, and thermal stability compared to traditional MOSFETs.
  • High Gain (17 dB): Enhances signal amplification with minimal distortion.
  • Wide Voltage Range (40 V): Supports flexible design integration in various RF circuits.
  • Optimized for 500 MHz: Ideal for mid-band RF applications requiring stable performance.
  • RoHS3 & REACH Compliant: Environmentally friendly and meets global regulatory standards.
  • Robust Packaging (PWRSO-10RF): Ensures mechanical durability and thermal dissipation.

PD55008S-E Applications

This RF MOSFET excels in:

  • Base Station Amplifiers: Provides efficient power amplification for telecommunications infrastructure.
  • Industrial RF Systems: Suitable for high-frequency industrial heating, plasma generation, and medical equipment.
  • Broadcast Transmitters: Ensures clear signal transmission in FM/UHF broadcasting.
  • Military & Aerospace Communications: Reliable performance in mission-critical RF links.
  • ISM Band Applications: Optimized for 500 MHz operations in scientific and medical devices.

Conclusion of PD55008S-E

The PD55008S-E stands out as a high-efficiency, high-gain RF LDMOS MOSFET, combining advanced technology with robust packaging. Its 8 W output power, 17 dB gain, and 40 V rating make it a versatile choice for telecommunications, industrial, and broadcast applications. With STMicroelectronics' proven quality and compliance with environmental standards, this device is a reliable solution for engineers seeking performance and durability in RF power amplification.

FAQ

What operating temperature range does PD55008S-E support?
PD55008S-E has an operating temperature range of 165°C.
Is PD55008S-E currently in stock?
What is the mounting type of PD55008S-E?
What voltage specification is listed for PD55008S-E?
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