STMicroelectronics_PD55035-E
original

STMicroelectronics
PD55035-E

285-PD55035-E
35W 40V 500MHz LDMOS RF Transistor, N-Channel, Surface Mount

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Tech Specifications

Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
500MHz
Gain
16.9dB
Gate to Source Voltage (Vgs)
20V
Max Frequency
1GHz
Max Operating Temperature
165°C
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PD55035-E Description

PD55035-E Description

The PD55035-E is an LDMOS RF MOSFET designed and manufactured by STMicroelectronics. It is a high-performance device with a rated voltage of 40V and a power output of 35W, making it suitable for various high-power applications. The device is packaged in a Tube format, which provides excellent thermal performance and ease of handling. Despite being classified as obsolete, the PD55035-E still offers significant advantages over similar models due to its unique features and performance capabilities.

PD55035-E Features

  • High Power Output: The PD55035-E delivers a power output of 35W, making it ideal for high-power applications such as radio and television transmitters, radar systems, and military communication equipment.
  • Low Voltage Operation: With a rated voltage of 12.5V, the PD55035-E operates at a lower voltage than many other LDMOS devices, reducing power consumption and improving efficiency.
  • High Gain: The device offers a gain of 16.9dB, providing excellent signal amplification and linearity.
  • Robust Construction: The PD55035-E has a moisture sensitivity level (MSL) of 3, allowing it to withstand exposure to moisture for up to 168 hours without damage.
  • Compliance: The device is compliant with REACH regulations and RoHS3 standards, ensuring environmental and health safety.
  • Frequency Range: The PD55035-E operates at a frequency of 500MHz, making it suitable for a wide range of applications, including cellular networks, satellite communications, and radar systems.

PD55035-E Applications

The PD55035-E is ideal for various high-power applications in the electronics industry, including:

  1. Radio and Television Transmitters: Due to its high power output and low voltage operation, the PD55035-E is well-suited for use in radio and television transmitters, providing efficient signal amplification.
  2. Radar Systems: The device's high gain and low voltage operation make it an excellent choice for radar systems, where high power and signal amplification are critical.
  3. Military Communication Equipment: The PD55035-E's robust construction and compliance with REACH and RoHS3 standards make it suitable for use in military communication equipment, where reliability and safety are paramount.
  4. Cellular Networks: The device's frequency range of 500MHz makes it suitable for use in cellular networks, providing efficient signal amplification and linearity.

Conclusion of PD55035-E

Despite being classified as obsolete, the PD55035-E remains a high-performance LDMOS RF MOSFET with unique features and advantages over similar models. Its high power output, low voltage operation, high gain, and robust construction make it an ideal choice for a wide range of high-power applications in the electronics industry. While it may not be the latest technology, the PD55035-E still offers significant benefits and value to those seeking a reliable and efficient solution for their high-power needs.

FAQ

What voltage specification is listed for PD55035-E?
The listed voltage-related specification for PD55035-E is 40V.
What is the mounting type of PD55035-E?
What operating temperature range does PD55035-E support?
What is PD55035-E?
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